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The split silicon-vacancy defect (SiV) in diamond is an electrically and optically active color center. Recently, it has been shown that this color center is bright and can be detected at the single defect level. In addition, the SiV defect…

Materials Science · Physics 2013-12-25 Adam Gali , Jeronimo R. Maze

Diamond is a solid-state platform to develop quantum technologies, but it has been a long-standing problem that the current understanding of quantum states in diamond is mostly limited to single-electron pictures. Here, we combine the full…

Chemical Physics · Physics 2023-07-19 Yilin Chen , Tonghuan Jiang , Haoxiang Chen , Erxun Han , Ali Alavi , Kuang Yu , En-Ge Wang , Ji Chen

Applications of negatively charged nitrogen-vacancy center in diamond exploit the center's unique optical and spin properties, which at ambient temperature, are predominately governed by electron-phonon interactions. Here, we investigate…

Quantum Physics · Physics 2015-09-30 Taras Plakhotnik , Marcus W. Doherty , Neil B. Manson

We demonstrate fully three-dimensional and patterned localization of nitrogen-vacancy (NV) centers in diamond with coherence times in excess of 1 ms. Nitrogen {\delta}-doping during CVD diamond growth vertically confines nitrogen to 4 nm…

Mesoscale and Nanoscale Physics · Physics 2016-05-04 Claire A. McLellan , Bryan A. Myers , Stephan Kraemer , Kenichi Ohno , David D. Awschalom , Ania C. Bleszynski Jayich

The positively charged nitrogen vacancy (NV+) centre in diamond has been traditionally treated as a dark state due to the experimental lack of an optical signature. Recent computational studies have shown that it is possible for the NV+…

Mesoscale and Nanoscale Physics · Physics 2022-01-05 Akib Karim , Igor Lyskov , Salvy P. Russo , Alberto Peruzzo

The nitrogen-vacancy (NV) center is a well utilized system for quantum technology, in particular quantum sensing and microscopy. Fully employing the NV center's capabilities for metrology requires a strong understanding of the behavior of…

Mesoscale and Nanoscale Physics · Physics 2019-03-13 M. S. J. Barson , P. M. Reddy , S. Yang , N. B. Manson , J. Wrachtrup , M. W. Doherty

The controlled and coherent manipulation of individual quantum systems is a fundamental key for the development of quantum information processing. The nitrogen-vacancy (NV) color center in diamond is a promising system since its…

Negatively charged nitrogen-vacancy (NV) center in diamond is the representative solid state defect qubit for quantum information science, offering long coherence time at room temperature. To achieve high sensitivity and spatial resolution,…

Materials Science · Physics 2025-08-12 Pei Li , Guanjian Hu , Xiao Yu , Bing Huang , Song Li

The nitrogen-vacancy (NV) centre in diamond is a unique optical defect that is used in many applications today and methods to enhance its fluorescence brightness are highly sought after. We observed experimentally an enhancement of the NV…

Mesoscale and Nanoscale Physics · Physics 2017-05-23 M. Capelli , P. Reineck , D. W. M. Lau , A. Orth , J. Jeske , M. W. Doherty , T. Ohshima , A. D. Greentree , B. C. Gibson

The nitrogen-vacancy (NV) centre in diamond is emerging as a promising platform for solid-state quantum information processing and nanoscale metrology. Of interest in these applications is the manipulation of the NV charge, which can be…

Characterizing the local internal environment surrounding solid-state spin defects is crucial to harnessing them as nanoscale sensors of external fields. This is especially germane to the case of defect ensembles which can exhibit a complex…

We report a study of the 3E excited-state structure of single nitrogen-vacancy (NV) defects in diamond, combining resonant excitation at cryogenic temperatures and optically detected magnetic resonance. A theoretical model of the…

Quantum sensing using optically addressable atomic-scale defects, such as the nitrogen--vacancy (NV) center in diamond, provides new opportunities for sensitive and highly localized characterization of chemical functionality. Notably,…

Control over the charge states of color centers in solids is necessary in order to fully utilize them in quantum technologies. However, the microscopic charge dynamics of deep defects in wide-bandgap semiconductors are complex, and much…

Mesoscale and Nanoscale Physics · Physics 2021-09-08 A. Gardill , I. Kemeny , M. C. Cambria , Y. Li , H. T. Dinani , A. Norambuena , J. R. Maze , V. Lordi , S. Kolkowitz

Electrically-active defects have a significant impact on the performance of electronic devices based on wide band-gap materials such as diamond. This issue is ubiquitous in diamond science and technology, since the presence of charge traps…

Photochromism in single nitrogen-vacancy optical centers in diamond is demonstrated. Time-resolved optical spectroscopy shows that intense irradiation at 514 nm switches the nitrogen-vacancy defects to the negative form. This defect state…

Single defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and EPR spectra unambiguously show that the produced defect is the…

Materials Science · Physics 2009-11-11 J. Meijer , B. Burchard , M. Domhan , C. Wittmann , T. Gaebel , I. Popa , F. Jelezko , J. Wrachtrup

We created dense ensembles of negatively charged nitrogen-vacancy (NV-) centers in diamond by neutron and electron irradiation for applications in hybrid quantum systems and magnetometry. We characterize fluorescence intensity, optical and…

Optically active point defects in crystals have gained widespread attention as photonic systems that can find use in quantum information technologies. However challenges remain in the placing of individual defects at desired locations, an…

Nitrogen-Vacancy (NV) centers in diamond have been identified over the past few years as promising systems for a variety of applications, ranging from quantum information science to magnetic sensing. This relies on the unique optical and…

Quantum Physics · Physics 2018-12-19 I. Meirzada , Y. Hovav , S. A. Wolf , N. Bar-Gill