Related papers: Tunneling Spin Injection into Single Layer Graphen…
Room temperature operation of a spin exclusive or (XOR) gate was demonstrated in lateral spin valve devices with nondegenerate silicon (Si) channels. The spin XOR gate is a fundamental part of the magnetic logic gate (MLG) that enables…
Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have been investigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, and Al2O(3-x)). Junctions with a Ni counter electrode and an aluminium oxide barrier…
We address the problem of barrier tunneling in the two-dimensional T_3 lattice (dice lattice). In particular we focus on the low-energy, long-wavelength approximation for the Hamiltonian of the system, where the lattice can be described by…
The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron nitride (h-BN) have emerged as promising nanoelectronic…
Two-dimensional electron gas (2DEG) formed at the interface between SrTiO3 (STO) and LaAlO3 (LAO) insulating layer is supposed to possess strong Rashba spin-orbit coupling. To date, the inverse Edelstein effect (i.e. spin-to-charge…
We present a theoretical study of momentum-resolved tunneling between parallel two-dimensional conductors whose charge carriers have a (pseudo-)spin-1/2 degree of freedom that is strongly coupled to their linear orbital momentum. Specific…
Spin accumulation and spin precession in single-layer graphene are studied by non-local spin valve measurements at room temperature. The dependence of the non-local magnetoresistance on electrode spacing is investigated and the results…
The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and potential to create a spin field-effect transistor. However, for this reason, graphene was largely overlooked as a possible spin-charge…
Conversion of pure spin current to charge current in single-layer graphene (SLG) is investigated by using spin pumping. Large-area SLG grown by chemical vapor deposition is used for the conversion. Efficient spin accumulation in SLG by spin…
We report on systematic ab-initio investigations of Co and Cr interlayers embedded in Fe(001)/MgO/Fe(001) magnetic tunnel junctions, focusing on the changes of the electronic structure and the transport properties with interlayer thickness.…
We obtain in single van-der-Waals layer of MnBi2Te4 the spin-valve-like ferromagnet/spin glass (SG)/ferromagnet architecture, where the switch of individual spin states in the SG-like layer appears as the resistance switch behavior. The…
We present results on the magnetoresistance of the system Ni/Al203/n-doped Si/Al2O3/Ni in fabricated nanostructures. The results at temperature of 14K reveal a 75% magnetoresistance that decreases in value up to approximately 30K where the…
We report a strong effect of interface-induced magnetization on the transport properties of magnetic tunnel junctions consisting of ferromagnetic manganite La$_{0.7}$Ca$_{0.3}$MnO$_{3}$ and insulating cuprate PrBa$_{2}$Cu$_{3}$O$_{7}$.…
We demonstrate pseudo spin valves with a (112)-textured DO_22 MnGa (MnGa) tilted magnetization fixed layer and an in-plane CoFe free layer. Single D0_22 MnGa films exhibit a small magnetoresistance (MR) typically observed in metals. In…
We demonstrate spin polarized tunneling from Fe through a SiO2 tunnel barrier into a Si n-i-p heterostructure. Transport measurements indicate that single step tunneling is the dominant transport mechanism. The circular polarization, Pcirc,…
Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, for the first time, we demonstrate gate-tunable spin…
We created epitaxial magnetic tunnel junctions of FeCo/MgO/EuS on MgO buffered Si (100). Tunnel magnetoresistance reached up to 64% at 4.2 K. An unexpected fast drop of magnetoresistance was recorded for MgO thickness above 1 nm, which is…
In this work, we theoretically investigate the spin-Peltier effect in a heterostructure composed of graphene and a ferromagnetic insulator (FI). Using a microscopic formalism based on the characteristic spin-flip scattering length at the…
We present a study of the transport properties of thermally generated spin currents in an insulating ferrimagnetic-antiferromagnetic-ferrimagnetic trilayer over a wide range of temperature. Spin currents generated by the spin Seebeck effect…
The injection of spin polarized electrons from ferromagnetic metals (Fe and Co) into gallium nitride (GaN) via scanning tunneling microscopy (STM) is demonstrated. Electrons from STM tips are injected into the semiconductor. Net circular…