Related papers: Parameter dependence of resonant spin torque magne…
With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…
Spin transfer torque magnetic random access memory (STT-MRAM) is a promising candidate for next generation memory as it is non-volatile, fast, and has unlimited endurance. Another important aspect of STT-MRAM is that its core component, the…
We introduce a method for a combined calculation of charge and vector spin transport of elastically tunneling electrons in magnetic scanning tunneling microscopy (STM). The method is based on the three-dimensional Wentzel-Kramers-Brillouin…
The probability switching characteristics in spin transfer torque magnetic tunnel junctions (STT-MTJs) are simulated by considering thermal noise using a spin-circuit module. Thermal noise significantly affects the probability switching for…
We use spin-transfer-driven ferromagnetic resonance (ST-FMR) to measure the spin-transfer torque vector T in MgO-based magnetic tunnel junctions as a function of the offset angle between the magnetic moments of the electrodes and as a…
We present spin transfer switching results for MgO based magnetic tunneling junctions (MTJs)with large tunneling magnetoresistance (TMR) ratio of up to 150% and low intrinsic switching current density of 2-3 x 10 MA/cm2. The switching data…
We present a study of the magnetic dynamics associated with nanosecond scale magnetic switching driven by the spin Hall effect in 3-terminal nanoscale magnetic tunnel junctions (3T-MTJs) with in-plane magnetization. Utilizing fast pulse…
One of the biggest challenges the current STT-RAM industry faces is maintaining a high thermal stability while trying to switch within a given voltage pulse and energy cost. In this paper, we present a physics based analytical model that…
Modulation of a spin-torque oscillator (STO) signal based on a magnetic tunnel junction (MTJ) with perpendicularly magnetized free layer is investigated. Magnetic field inductive loop was created during MTJ fabrication process, which…
The $\varphi_0$ Josephson junctions formed by ordinary superconductors and a magnetic non-centrosymmetric interlayer are studied. We derive an analytical solution for the magnetization dynamics induced by an arbitrary current pulse and…
The field of spintronics involves the study of both spin and charge transport in solid state devices with a view toward increasing their functionality and efficiency. Alternatively, the field of ultrafast magnetism focuses on the use of…
Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field…
Rapid random telegraph noise (RTN) in magnetic tunnel junctions (MTJs) is an important figure of merit for probabilistic computing applications. However, the interactions between the macrospin and spin waves with finite wave numbers reduce…
We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical current, high outputpower in the micro watt range, and…
We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as…
GaMnAs-based magnetic tunnel junction (MTJ) devices are characterized by in-plane and perpendicular-toplane magnetotransport at low temperatures. Perpendicular-to-plane transport reveals the typical tunneling magnetotransport (TMR) signal.…
We demonstrate a simple network-analyzer technique to make quantitative measurements of the bias dependence of spin torque in a magnetic tunnel junction. We apply a microwave current to exert an oscillating spin torque near the…
Spin transfer torque oscillators (STOs) based on magnetic tunnel junction (MTJ) devices are emerging as a possible replacement for complementary metal-oxide semiconductors for radio-frequency (RF) signal generation. Advantages include low…
Magnetic tunnel junctions (MTJs) are key components of spintronic devices, such as magnetic random-access memories. Normally, MTJs consist of two ferromagnetic (FM) electrodes separated by an insulating barrier layer. Their key functional…
This paper describes a numerical experiment of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). Differently from other works, the current density distribution throughout the…