Related papers: Dynamical properties of electrical circuits with f…
Variability in memristive devices based on h-BN dielectrics is studied in depth. Different numerical techniques to extract the reset voltage are described and the corresponding cycle-to-cycle variability is characterized by means of the…
Hybrid oscillator architectures that combine feedback oscillators with self-sustained negative resistance oscillators have emerged as a promising platform for artificial neuron design. In this work, we introduce a modeling and analysis…
We propose a quantum Hamiltonian for a transmission line with charge discreteness. The periodic line is composed of an inductance and a capacitance per cell. In every cell the charge operator satisfies a nonlinear equation of motion because…
A model of memristor-based Chuas oscillator is studied. The considered system has infinitely many equilibrium points, which build a line of equilibria. Bifurcational mechanisms of oscillation excitation are explored for different forms of…
Memristor devices are crucial for developing neuromorphic computers and next-generation memory technologies. In this work, we provide a comprehensive modelling tool for simulating static DC reading operations of memristor crossbar arrays…
Real-time detection of moving objects involves memorisation of features in the template image and their comparison with those in the test image. At high sampling rates, such techniques face the problems of high algorithmic complexity and…
Conical microfluidic channels filled with electrolytes exhibit volatile memristive behavior, offering a promising platform for energy-efficient, neuromorphic computing. Here, we integrate these iontronic channels as additional nonlinear…
The recent discovery of a nonsaturating linear magnetoresistance in several correlated electron systems near a quantum critical point has revealed an interesting interplay between the linear magnetoresistance and the zero-field…
This paper explores the algebraic conditions under which a cellular automaton with a non-linear local rule exhibits surjectivity and reversibility. We also analyze the role of permutivity as a key factor influencing these properties and…
We present a comprehensive phenomenological model for the crossbar integrated metal-oxide continuous-state memristors. The model consists of static and dynamic equations, which are obtained by fitting a large amount of experimental data,…
Active memristor elements, also called neuristors, are self-oscillating devices that are very good approximations to biological neuronal functionality and are crucial to the development of low-power neuromorphic hardware. Materials that…
A simple and unambiguous test has been recently suggested [J. Phys. D: Applied Physics, 52, 01LT01 (2018)] to check experimentally if a resistor with memory is indeed a memristor, namely a resistor whose resistance depends only on the…
The memristor, because of its controllability over a wide dynamic range of resistance, has emerged as a promising device for data storage and analog computation. A major challenge is the accurate measurement of memristance over a wide…
Once referred to as the missing circuit component, memristor has come long way across to be recognized and taken as important to future circuit designs. The memristor due to its ability to memorize the state, switch between different…
Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity…
We report simulation of nanostructured memristor device using piecewise linear and nonlinear window functions for RRAM and neuromorphic applications. The linear drift model of memristor has been exploited for the simulation purpose with the…
Memristive devices have drawn considerable research attention due to their potential applications in non-volatile memory and neuromorphic computing. The combination of resistive switching devices with light-responsive materials is…
Nonreciprocal devices such as circulators and isolators belong to an important class of microwave components employed in applications like the measurement of mesoscopic circuits at cryogenic temperatures. The measurement protocols usually…
We put forward a new proposal of designing charge-based logic devices considering a cyclic molecule that can be programmed and re-programmed for different functional logical operations and suitably engineered for data storage as well. The…
The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a…