Related papers: Epitaxial EuO Thin Films on GaAs

This paper reports on the structural and optical properties of Co-doped TiO2 thin films grown onto (0001) Al2O3 substrates by non-reactive pulsed laser deposition (PLD) using argon as buffer gas. It is shown that by keeping constant the…

Future spintronics requires the realization of thin film of half-metallic ferromagnets having high Curie temperature and 100\% spin polarization at the Fermi level for potential spintronics applications. In this paper, we report the…

We have grown the ferromagnetic semiconductor GaMnAs containing up to 10% Mn by migration enhanced epitaxy at a substrate temperature of 150^oC. The alternate supply of As2 molecules and Ga and Mn atoms made it possible to grow single…

The growth and characterization of epitaxial Co3O4(111) films grown by oxygen plasma-assisted molecular beam epitaxy on single crystalline a-Al2O3(0001) is reported. The Co3O4(111) grows single crystalline with the epitaxial relation…

We report epitaxial growth and characterization of GaN thin films on sapphire (0001) substrates using low temperature GaN intermediate layer by plasma assisted molecular beam epitaxy (PA-MBE) technique. As grown and annealed GaN thin films…

We report the epitaxial growth of CdCr2Se4, an n-type ferromagnetic semiconductor, on both GaAs and GaP(001) substrates, and describe the structural, magnetic and electronic properties. Magnetometry data confirm ferromagnetic order with a…

We report on the epitaxial growth and surface structure of infinite-layer cuprate Sr1-xNdxCuO2 films on SrTiO3(001) substrates by combining ozone-assisted molecular beam epitaxy and in situ scanning tunneling microscopy. Careful substrate…

Materials with perpendicular magnetic anisotropy (PMA) effect with high Curie temperature ($T_C$) is essential in applications. In this work, $Cr_2Te_3$ thin films showing PMA with $T_C$ ranging from 165 K to 295 K were successfully grown…

Co2FeAl (CFA) thin films with thickness varying from 10 nm to 115 nm have been deposited on MgO(001) substrates by magnetron sputtering and then capped by Ta or Cr layer. X-rays diffraction (XRD) revealed that the cubic $[001]$ CFA axis is…

Co$_{2}$TiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray diffraction was combined with lattice parameter calculations by…

We report on an enhancement of the Curie temperature in GaMnAs/InGaMnAs superlattices grown by low-temperature molecular beam epitaxy, which is due to thin InGaMnAs or InGaAs films embedded into the GaMnAs layers. The pronounced increase of…

Rutile Germanium Dioxide (r-GeO$_2$) has been identified as an ultrawide bandgap (UWBG) semiconductor recently, featuring a bandgap of 4.68 eV, comparable to Ga$_2$O$_3$ but offering bipolar dopability, higher electron mobility, higher…

$\beta$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ has gained intensive interests of research and application as an ultrawide bandgap semiconductor. Epitaxial growth technique of the $\beta$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ thin film possesses a…

Quantum photonic networks require two distinct functionalities: bright single-photon sources and long-lived quantum memories. III-V semiconductor quantum dots excel as deterministic and coherent photon emitters, while rare-earth ions such…

We present a systematic growth study of epitaxial RuO$_2$(110) and IrO$_2$(110) on TiO$_2$(110) substrates by pulsed laser deposition. We describe the main challenges encountered in the growth process, such as a deteriorating material flux…

Rutile GeO2 has been predicted to be an ultra-wide bandgap semiconductor suitable for future power electronics devices while quartz-like GeO2 shows piezoelectric properties. To explore these crystalline phases for application and…

Epitaxial thin films of the highly spin polarized Heusler compound Co2Cr0.6Fe0.4Al are deposited by dc magnetron sputtering. It is shown by XRD and TEM investigations how the use of an Fe buffer layer on MgO(100) substrates supports the…

Nd$_{2-x}$Ce$_x$CuO$_{4\pm\delta}$ (NCCO) epitaxial thin films have been deposited on (100) SrTiO$_3$ substrates by DC sputtering technique in different atmosphere. The as-grown samples show different dependence of the in-plane resistivity…

We report growth and characterization of epitaxial $\alpha$-Sn thin films grown on CdTe(111)B. Noninvasive techniques verify the film's pseduomorphic growth before fabrication of magnetotransport devices, overcoming ex-situ obstacles on…

Nanosized Y3Fe5O12 epitaxial films have been grown on Nd3Ga5O12 substrates using laser molecular beam epitaxy method. Magneto-optical polar Kerr effect, ferromagnetic resonance and spin wave propagation measurements show that the…