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We report the development of a reactive sputtering process for high $T_\mathrm{c}$ NbN films with high normal-state resistivity, tailored for kinetic inductance parametric amplifiers. The process includes precise control to ensure full…
We demonstrate the self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire. This choice of substrate allows growth at an exceptionally high temperature of 1180 {\deg}C. In contrast to previous…
A wide-bandwidth and low-noise amplification chain in the microwave regime is crucial for the efficient read-out of quantum systems based on superconducting detectors, such as Microwave Kinetic Inductance Detectors (MKIDs), Transition Edge…
High-quality-factor ($Q$) mechanical resonators are essential components for precise sensing and control of mechanical motion at a quantum level. While amorphous materials such as SiN have been widely used in high-$Q$ mechanical resonators…
Suspending devices on thin SiN membranes can limit their interaction with the bulk substrate and reduce parasitic capacitance to ground. While suspending devices on membranes is used in many fields including radiation detection using…
Due to their exceptional plasmonic properties, noble metals such as gold and silver have been the materials of choice for the demonstration of various plasmonic and nanophotonic phenomena. However, noble metals' softness, lack of…
We report molecular beam epitaxial growth of a SnTe (111) layer on a CdTe template, fabricated by depositing it on a GaAs (111)A substrate, instead of BaF$_2$ which has been conventionally used as a substrate. By optimizing temperatures for…
The structural and electrical properties of Ti-N films deposited by reactive sputtering depend on their growth parameters, in particular the Ar:N2 gas ratio. We show that the nitrogen percentage changes the crystallographic phase of the…
Single-photon emitters are essential for enabling several emerging applications in quantum information technology, quantum sensing and quantum communication. Scalable photonic platforms capable of hosting intrinsic or directly embedded…
Silicon nitride (SiN) mechanical resonators with high quality mechanical properties are attractive for fundamental research and applications. However, it is challenging to maintain these mechanical properties while achieving strong coupling…
Two single crystal phases of tantalum nitride were stabilized on c-plane sapphire using molecular beam epitaxy. The phases were identified to be $\delta$-TaN with a rocksalt cubic structure and $\gamma$-Ta$_2$N with a hexagonal structure.…
The objective of this work was to study the RF sputtering process parameters optimisation for deposition of Silicon Nitride thin films. The process parameters chosen to be varied were deposition power, deposition duration, flow rate of…
We designed and successfully fabricated an absorption-type of superconducting coplanar waveguide (CPW) resonators. The resonators are made from a Niobium film (about 160 nm thick) on a high-resistance Si substrate, and each resonator is…
Nanophotonic devices offer an unprecedented ability to concentrate light into small volumes which can greatly increase nonlinear effects. However, traditional plasmonic materials suffer from low damage thresholds and are not compatible with…
Here we report mid infrared (mid-IR) photothermal response of multi layer MoS2 thin film grown on crystalline (p-type silicon and c-axis oriented single crystal sapphire) and amorphous substrates (Si/SiO2 and Si/SiN) by pulsed laser…
The recent discovery of room temperature intrinsic single-photon emitters in silicon nitride (SiN) provides the unique opportunity for seamless monolithic integration of quantum light sources with the well-established SiN photonic platform.…
The performance of superconducting microwave circuits is strongly influenced by the material properties of the superconducting film and substrate. While progress has been made in understanding the importance of surface preparation and the…
Low-temperature epitaxial growth of refractory transition-metal nitride thin films by means of physical vapor deposition has been a recurring theme in advanced thin-film technology for several years. In the present study, 150-nm-thick…
We demonstrate wideband integrated photonic circuits in sputter-deposited aluminum nitride (AlN) thin films. At both near-infrared and visible wavelengths, we achieve low propagation loss in integrated waveguides and realize high-quality…
LaTiO$_{3+\delta/2}$, NdTiO$_{3+\delta/2}$, and Nd$_{1-x}$Sr$_{x}$TiO$_{3+\delta/2}$ thin films have been epitaxially grown on (100)SrTiO$_{3}$ and (100)LaAlO$_{3}$ single crystal substrates by using the pulsed laser deposition technique.…