Related papers: Memory effect under pressure in low density amorph…
Layered transition-metal trichalcogenides have become one of the research frontiers as two-dimensional magnets and candidate materials used for phase-change memory devices. Herein we report the high-pressure synchrotron X-ray diffraction…
Controlled formation of porous silicon has been of primary importance for numerous landmark applications such as light emitting sources, sensors, actuators, drug delivery systems, and energy storage applications. Frequently explored methods…
Molecular dynamics simulations are performed to provide a detailed understanding of the functional degradation of shape memory alloys at small scale. The origin of the experimentally reported accumulation of plastic deformation and the…
Mechanical shear deformations lead, in some cases, to effects similar to those resulting from ion irradiation. Here we characterize the effects of shear velocity and temperature on amorphous silicon (\aSi) modelled using classical molecular…
At temperatures below 1 K, the capacitance of a glass sample changes due to the application of a DC field in accordance with A. Burins dipole gap theory. However, we now report that below 20 mK, during the first sweep cycle of the DC…
Amorphous silica density at ambient pressure is known to depend on thermal history (through the quenching rate) but also, at room temperature, on the maximum pressure applied in the past. Here we show that beyond density, a mechanical…
Bi-stable objects that are pushed between states by an external field are often used as a simple model to study memory formation in disordered materials. Such systems, called hysterons, are typically treated quasistatically. Here, we…
We discuss how structural disorder and amorphization affects solid-state diffusion, and consider zirconolite as a currently important case study. By performing extensive molecular dynamics simulations, we disentangle the effects of…
We introduce a real-space approach to understand the relationship between optical absorption and crystal structure. We apply this approach to alternative phases of silicon, with a focus on the Si$_{20}$ crystal phase as a case study. We…
Memory encoding by cyclic shear is a reliable process to store information in jammed solids, yet its underlying mechanism and its connection to the amorphous structure are not fully understood. When a jammed sphere packing is repeatedly…
Directional memory in amorphous solids is commonly quantified through the Bauschinger effect, yet the observation of the inverse Bauschinger effect suggests that the sign of memory can invert, pointing to distinct underlying plastic…
We perform experimental and numerical studies of a granular system under cyclic-compression to investigate reversibility and memory effects. We focus on the quasi-static forcing of dense systems, which is most relevant to a wide range of…
We consider the homogenisation of the instationary Stokes equations in a porous medium with an a-priori given evolving microstructure. In order to pass to the homogenisation limit, we transform the Stokes equations to a domain with a fixed…
The dominant dielectric used currently in silicon devices is silicon oxide. Its application for future devices will be impeded by several fundamental limitations which lead to low reliability of semiconductor devices and to the necessity of…
Recent experimental and computational studies of vibrated thin layers of identical spheres have shown transitions to ordered phases similar to those seen in equilibrium systems. Motivated by these results, we carry out simulations of hard…
Amorphous silicon (a-Si) models are analyzed for structural, electronic and vibrational characteristics. Several models of various sizes have been computationally fabricated for this analysis. It is shown that a recently developed…
An important aspect of the physics of amorphous solids is the onset of irreversible behavior usually associated with yield. Here we study amorphous solids under periodic shear using quasi-static molecular dynamics simulations and observe a…
Silicon (Si) is one of the most abundant elements on Earth, and it is the most important and widely used semiconductor, constituting the basis of modern electronic devices. Despite extensive study, some properties of Si remain elusive. For…
In this lecture we review high-pressure phase transition sequences exhibited by simple elements, looking at the examples of the main group I, II, IV, V, and VI elements. General trends are established by analyzing the changes in…
A comparison of porous structures formed from silicon (Si) wafers with different resistivities has been reported here based on the morphological studies carried out using scanning electron microscope (SEM). The porous Si samples have been…