Related papers: Tuning carrier type and density in Bi2Se3 by Ca-do…
Single crystals of the layered superconductor Bi2Sr2(Ca1-xLax)Cu2O8+d were successfully grown out by a self-flux method. Upon La-doping, the c-axis contracts but the structure remains stable up to the critical concentration xc, above which…
The magnetic and electronic properties of the magnetically doped topological insulator Bi$_{\rm 2-x}$Mn$_{\rm x}$Te$_3$ were studied using electron spin resonance (ESR) and measurements of static magnetization and electrical transport. The…
We report on the synthesis and physical properties of FeSe$_{1-x}$Te$_x$ single crystals with a low Te content (x = 0.17, 0.21, 0.25), where the replacement of Se with Te partially suppresses superconductivity. Resistivity and Hall effect…
Kondo insulator FeSb$_2$ with large Seebeck coefficient would have potential in thermoelectric applications in cryogenic temperature range if it had not been for large thermal conductivity $\kappa$. Here we studied the influence of…
We report the Se substitution effects on the crystal structure, superconducting properties, and valence states of self-doped BiCh2-based compound CeOBiS2-xSex. Polycrystalline CeOBiS2-xSex samples with x = 0-1.0 were synthesized. For x =…
Thermoelectric materials allow the direct conversion of waste heat into electricity, and novel materials are being investigated for this purpose. Recently, doped Bi$_2$O$_2$Se has shown high application potential. In this study, we discuss…
SrTiO$_3$ exhibits superconductivity for carrier densities $10^{19}-10^{21}$ cm$^{-3}$. Across this range, the Fermi level traverses a number of vibrational modes in the system, making it ideal for studying dilute superconductivity. We use…
Pure Topological Insulating materials preserve a unique electronic state comprising of bulk insulating gap and conducting surface states. Here we use bulk Bi2Se3 single crystals possessing Se vacancy defects as a prototype topological…
Magnetoresistance and Hall resistance measurements have been carried out in fastcooled single crystals of Bi2Se3-xTex (x: 0 to 2) in 4 to 300 K temperature range, under magnetic fields up to 15 T. The variation of resistivity with…
It is known that iron selenide superconductors exhibit unique characteristics distinct from iron pnicitides, especially in the electron-doped region. However, acomprehensive study of continuous carrier doping ang the corresponding crystal…
We investigate the currently debated issue concerning whether transition metal substitutions dope carriers in iron based superconductors. From first-principles calculations of the configuration-averaged spectral function of BaFe$_2$As$_2$…
Using first principles calculations, we study the conduction band alignment, effective mass, and Fermi surface complexity factor of n-type Mg3Sb2-xBix (x = 0, 1, and 2) from the full ab initio band structure. We find that with increasing…
We report x-ray diffraction, electrical resistivity, and magnetoresistance measurements on Bi2Se3 under high pressure and low temperature conditions. Pressure induces profound changes in both the room temperature value of the electrical…
We report the effect of Se substitution on the crystal structure and superconductivity of BiCh2-based (Ch: S, Se) layered compounds Eu0.5Ce0.5FBiS2-xSex (x = 0-1). Crystal structure analysis showed that both lattice constants, a and c,…
Recently, the superconductivity of bilayer nickelate La3Ni2O7 has been observed in the thin film at ambient pressure, facilitated by epitaxial strain. Here, we investigate the effects of film thickness and carrier doping on the electronic…
The pressure induced superconductivity and structural evolution for Bi2Se3 single crystal have been studied. The emergence of superconductivity with onset transition temperature (Tc) about 4.4K is observed around 12GPa. Tc increases rapidly…
Defect engineering can improve the linked charge, spin, and lattice behavior of thermoelectric topological insulators. Using density functional theory with spin orbit coupling, we study structural, electronic, optical, thermoelectric,…
This letter reports on the design and demonstration of high-performance Beta-Ga2O3 FinFETs utilizing MOCVD-grown Si delta-doped channels to achieve enhanced carrier transport and electrostatic control. A record high sheet charge density of…
We study mechanisms of control of charge state and concentration of different point defects in doped insulating crystals. The approach is based on the density functional theory calculations. We apply it to the problem of obtaining of…
A review of electronic properties of insulating-, boron- and phosphorus-doped diamond is given. The main goal is, to show data in a wider context, to reveal trends and limitations with respect to carrier mobilities, conductivities, p- and…