Related papers: Proposal for a single-molecule field-effect transi…
Circularly polarized phonons offer a new route for mediating angular momentum in solids. However, controlling phonon angular momentum without altering the material's structure or composition remains challenging. Here, we demonstrate the…
The complex electric modulus and the ac conductivity of carbon nanoonion/polyaniline composites were studied from 1 mHz to 1 MHz at isothermal conditions ranging from 15 K to room temperature. The temperature dependence of the electric…
Based upon spin-lattice interaction, we propose a theoretical model for the phonon Hall effect in paramagnetic dielectrics. The thermal Hall conductivity is calculated by using the Kubo formula. Our theory reproduces the essential…
The joint effect of the electron-phonon interaction and Kondo effect on the nonequilibrium transport through the single molecule transistor is investigated by using the improved canonical transformation scheme and extended equation of…
We develop theoretical arguments that demonstrate the possibility of metallic field-effect transistors (METFET's) in one-dimensional systems and particularly in armchair carbon nanotubes. A very inhomogeneous electric field, such as the…
The thermal conductance by phonons of a quasi-one-dimensional solid with isotope or defect scattering is studied using the Landauer formalism for thermal transport. The conductance shows a crossover from localized to Ohmic behavior, just as…
Ta2NiSe5 is considered a promising excitonic insulator (EI) candidate with slight phonon contributions, since it exhibits a tiny orthorhombic-to-monoclinic structural distortion at 328 K without any superlattice structure. Our synchrotron…
We provide a theoretical framework for the development of a solid-state thermal rectifier through a confinement in the available population of phonons on one side of an asymmetrically graded film stack. Using a modification of the phonon…
Single-electron transistors would represent an approach for less power consuming microelectronic devices if room-temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small,…
By way of the nonequilibrium Green's function simulations and first principles calculations, we report that borophene, a single layer of boron atoms that was fabricated recently, possesses an extraordinarily high lattice thermal conductance…
The cooling of two-dimensional electrons in silicon-metal-oxide semiconductor field effect transistors is studied experimentally. Cooling to the lattice is found to be more effective than expected from the bulk electron-phonon coupling in…
We report a theoretical model for a thermal transistor in dielectric four-terminal nanostructures based on mesoscopic ballistic phonon transport, in which a steady thermal flow condition of system is obtained to set up the temperature field…
Phonon polarization in a magnetic field is analyzed in 2D model. It is shown, that at presence of spin-phonon interaction phonon possess elliptic polarization which causes the appearance of heat flux component perpendicular both to…
We present a perturbative method for calculating phonon properties of an insulator in the presence of a finite electric field. The starting point is a variational total-energy functional with a field-coupling term that represents the effect…
We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\sim$10 and 200 mV. We attribute them to electron…
We study field-effect transistors realized from VO2 nanobeams with HfO2 as the gate dielectric. When heated up from low to high temperatures, VO2 undergoes an insulator-to-metal transition. We observe a change in conductance (~ 6 percent)…
Electronic transport in a carbon nanotube (CNT) metal-oxide-semiconductor field effect transistor (MOSFET) is simulated using the non-equilibrium Green's functions method with the account of electron-phonon scattering. For MOSFETs,…
Using first-principle electronic structure calculations, we show a metal- semiconductor transition of a metallic graphene nanoribbon with zigzag edges induced by substitutional doping of Nitrogen or Boron atoms at the edges. A field effect…
We study numerically the low-temperature electronic transport properties of a single-ion magnet with uniaxial and transverse spin anisotropies. We find clear signatures of a Kondo effect caused by the presence of a transverse (zero-field)…
It appears feasible with nanostructures to perform calorimetry at the level of individual thermal phonons. Here I outline an approach employing monocrystalline mesoscopic insulators, which can now be patterned from semiconductor…