Related papers: Radio frequency pulsed-gate charge spectroscopy on…
A pulsed-gate technique with charge sensing is used to measure the singlet-triplet relaxation time for nearly-degenerate spin states in a two-electron double quantum dot. Transitions from the (1,1) charge occupancy state to the (0,2) state,…
We use a double quantum dot as a frequency-tunable on-chip microwave detector to investigate the radiation from electron shot-noise in a near-by quantum point contact. The device is realized by monitoring the inelastic tunneling of…
We demonstrate a novel method for measuring the discrete energy spectrum of a quantum dot connected very weakly to a single lead. A train of voltage pulses applied to a metal gate induces tunneling of electrons between the quantum dot and a…
Pulsed electrostatic gating combined with capacitive charge sensing is used to perform excited state spectroscopy of an electrically isolated double-quantum-dot system. The tunneling rate of a single charge moving between the two dots is…
We present measurements on a quantum dot and a nearby, capacitively coupled, quantum point contact used as a charge detector. With the dot being weakly coupled to only a single reservoir, the transfer of individual electrons onto and off…
The detection of the quantum dot charge state using a quantum point contact charge detector has opened a new exciting route for the investigation of quantum dot devices in recent years. In particular, time-resolved charge detection allowed…
We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass…
We study coherent oscillations in double quantum dots tunnel-coupled to metallic leads by means of full counting statistics of electron transport. If two such systems are coupled by Coulomb interaction, there are in total six (instead of…
Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a…
Coupled quantum dots are potential candidates for qubit systems in quantum computing. We use a non-invasive voltage probe to study the evolution of a coupled dot system from a situation where the dots are coupled to the leads to a situation…
The coherent time evolution of electrons in double quantum dots induced by fast bias-voltage switches is studied theoretically. As it was shown experimentally, such driven double quantum dots are potential devices for controlled…
Coherent coupling between a large number of qubits is the goal for scalable approaches to solid state quantum information processing. Prototype systems can be characterized by spectroscopic techniques. Here, we use pulsed-continuous wave…
We present time-resolved charge sensing measurements on a GaAs double quantum dot with two proximal quantum point contact (QPC) detectors. The QPC currents are analyzed with cross-correlation techniques, which enables us to measure dot…
We propose and demonstrate wide-band capacitance measurements on a semiconductor double-quantum dot (DQD) to study tunneling dynamics. By applying phase-tunable high-frequency signals independently to the DQD and a nearby…
We report the dispersive charge-state readout of a double quantum dot in the few-electron regime using the in situ gate electrodes as sensitive detectors. We benchmark this gate-sensing technique against the well established quantum point…
We present a numerical model which allows us to study the Kelvin force probe microscopy response to the charge switching in quantum dots at various time scales. The model provides more insight into the behavior of frequency shift and…
We employ ultrafast pump-probe spectroscopy to directly monitor electron tunneling between discrete orbital states in a pair of spatially separated quantum dots. Immediately after excitation, several peaks are observed in the pump-probe…
Gate-defined semiconductor quantum dots utilize fast electrical control to manipulate spin and charge states of individual electrons. Electrical pulse distortions can limit control fidelities but are difficult to measure at the device…
We investigate electronic transport through gate-defined quantum dots in molybdenum disulfide MoS$_2$ using an integrated charge detector. We observe a crossover from two weakly coupled single dots to a strongly coupled double quantum dot.…
Quasi-static transport measurements are employed on a laterally defined tunnel-coupled double quantum dot. A nearby quantum point contact allows us to track the charge as added to the device. If charged with only up to one electron, the…