Related papers: Interface roughness, valley-orbit coupling and val…

Control of multi-level quantum systems is sensitive to implementation errors in the control field and uncertainties associated with system Hamiltonian parameters. A small variation in the control field spectrum or the system Hamiltonian can…

The shock wave instability induced when interacting with a small waviness on an interface was investigated analytically and numerically. The perturbation to the shock was phenomenologically treated assuming this as the consequence of the…

We report experimental evidences of anomalous kinetic roughening in the stable displacement of an oil-air interface in a Hele-Shaw cell with strong quenched disorder. The disorder consists on a random modulation of the gap spacing…

We report on a linear Langevin model that describes the evolution of the roughness of two interfaces that move towards each other and are coupled by a diffusion field. This model aims at describing the closing of the gap between two…

A material whose electrons are correlated can affect electron dynamics across the interface with another material. Such a "proximity effect" can have several manifestations, from order parameter leakage to generated effective interactions.…

We study the forced fluid invasion of an air-filled model porous medium at constant flow rate, in 1+1 dimensions, both experimentally and theoretically. We focus on the non-local character of the interface dynamics, due to liquid…

Elastic interfaces display scale-invariant geometrical fluctuations at sufficiently large lengthscales. Their asymptotic static roughness then follows a power-law behavior, whose associated exponent provides a robust signature of the…

Silicon spin qubits are marred by the valley degeneracy of the conduction band. In a nanodevice, the degeneracy is lifted by interfaces and alloy disorder, but the arising valley splitting is small, of order 100 $\mu$eV in Si/SiGe quantum…

We use a discrete-time formulation to study the asymmetric avalanche process [Phys. Rev. Lett. vol. 87, 084301 (2001)] on a finite ring and obtain an exact expression for the average avalanche size of particles as a function of toppling…

With silicon being the go-to material for spin qubits, and motivated by the demand of a scalable quantum computer architecture for fast and reliable quantum information transfer on-chip, we study coherent electron transport in a silicon…

Manifestations of quantum coherence in the electronic conductance through nearly closed quantum dots in the Coulomb blockade regime are addressed. We show that quantum coherent tunneling processes explain some puzzling statistical features…

The interfacial abruptness and uniformity in heterostructures are critical to control their electronic and optical properties. With this perspective, this work demonstrates the 3-D atomistic-level mapping of the roughness and uniformity of…

Boundary conditions at the interface between the free-flow region and the adjacent porous medium is a key issue for physically consistent modeling and accurate numerical simulation of flow and transport processes in coupled systems due to…

A quantum impurity attached to an interacting quantum wire gives rise to an array of of new phenomena. Using Bethe Ansatz we solve exactly models describing two geometries of a quantum dot coupled to an interacting quantum wire: a quantum…

We investigate the transition to quantum chaos, induced by static imperfections, for an operating quantum computer that simulates efficiently a dynamical quantum system, the sawtooth map. For the different dynamical regimes of the map, we…

The symmetries associated with discrete-time quantum walks (DTQWs) and the flexibilities in controlling their dynamical parameters allow to create a large number of topological phases. An interface in position space, which separates two…

We investigate the roughening of shear cracks running along the interface between a thin film and a rigid substrate. We demonstrate that short-range correlated fluctuations of the interface strength lead to self-affine roughening of the…

Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise to complex phenomena. Phosphorus dopants in silicon can be placed with atomic precision to address the…

Despite the fundamental importance of solid-solid transformations in many technologies, the microscopic mechanisms remain poorly understood. Here, we explore the atomistic mechanisms at the migrating interface during solid-solid phase…

Tunneling between two-dimensional electron layers with mutually correlated disorder potentials is studied theoretically. Due to this correlation, the diffusive eigenstates in different layers are almost orthogonal to each other. As a…