Related papers: Electrostatic charge accumulation versus electroch…
The correlated electron system SmNiO3 exhibits a metal-insulator phase transition at 130 {\deg}C. Using an ionic liquid as an electric double layer (EDL) gate on three-terminal ultrathin SmNiO3 devices, we investigate gate control of the…
We study the low temperature conductivity of the electron accumulation layer induced by the very strong electric field at the surface of $\text{SrTiO}_3$ sample. Due to the strongly nonlinear lattice dielectric response, the…
Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO3, and the band insulator SrTiO3 are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately 1/2 electron per surface unit…
Paraelectrical tuning of a charge carrier density as high as 10$^{13}$\,cm$^{-2}$ in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field…
The choice of electrostatic gating over the conventional chemical doping for phase engineering of quantum materials is attributed to the fact that the former can reversibly tune the carrier density without affecting the system's level of…
It has been shown recently that the overpotential originating from ionic conduction of alkali-ions through the inner dense solid-electrolyte interphase (SEI) is strongly non-linear. An empirical equation was proposed to merge the measured…
Due to the nonlinear dielectric response within SrTiO$_{3}$ (STO), an accumulation layer created by positive charges at the surface of the STO sample ($x=0$) has an electron density profile $n(x)$ that slowly decays as $1/x^{12/7}$. Here we…
Electric double layer transistor configurations have been employed to electrostatically dope single crystals of insulating SrTiO_{3}. Here we report on the results of such doping over broad ranges of temperature and carrier concentration…
We report on the fabrication and characterization of patterned high-mobility two-dimensional electron gases (2DEG) formed on SrTiO$_3$ (STO) substrate surfaces by hydrogen plasma exposure. The resulting devices consistently showed high…
Electron-doped infinite-layer Sr$_{1-x}$Eu$_{x}$CuO$_{2+y}$ films over a wide doping range have been prepared epitaxially on SrTiO$_3$(001) using reactive molecular beam epitaxy. In-plane transport measurements of the single crystalline…
Two-dimensional electron systems with fascinating properties exist in multilayers of standard semiconductors, on helium surfaces, and in oxides. Compared to the two-dimensional (2D) electron gases of semiconductors, the 2D electron systems…
Electric double layer (EDL) formation underlies the functioning of supercapacitors and several other electrochemical technologies. Here, we study how the EDL formation near two flat blocking electrodes separated by $2L$ is affected by…
The behaviors of resistance, magnetoresistance (up to 5 T), and Hall electromotive force (EMF) with varying temperature (from 10 to 300 K) and measuring current (from 10 mkA to 10 mA) are studied for the Si sample with CrSi2…
Interfaces between transition-metal oxides are able to host two-dimensional electron gases (2DEGs) and exhibit exotic quantum phenomena. Here we report the observation of superconductivity below 230 mK for the heterostructure composed of…
Superconductivity has been observed in doped SrTiO$_3$ at charge-carrier densities below 10$^{18}$ cm$^{-3}$, where the density of states at the Fermi level of the itinerant electrons is several orders of magnitude lower than that of…
We examine the carrier density dependence of the scattering rate in two- and three-dimensional electron liquids in SrTiO3 in the regime where it scales with T^n (T is the temperature and n <= 2) in the cases when it is varied by…
Superconducting FeSe0.8Te0.2 thin films on SrTiO3, LaAlO3 and CaF2 substrates were electrochemically etched in an ionic liquid DEME-TFSI electrolyte with a gate bias of 5 V. Superconductivity at 38 K was commonly observed on all substrates…
Electrochemical reactions represent essential processes in fundamental chemistry that foster a wide range of applications. Although most electrochemical reactions in bulk substances can be well described by the classical Marcus-Gerischer…
We report measurements of GaAs/AlGaAs undoped field-effect transistors in which two-dimensional electron gases (2DEGs) of exceptional quality and versatility are induced without modulation doping. Electron mobilities at T=4.2 K and density…
A two-dimensional electron gas (2DEG) forms at the interface of complex oxides like $SrTiO_{3}$ (STO) and $LaTiO_{3}$ (LTO), despite each material having a low native conductivity, as a band and a Mott insulator, respectively. The interface…