Related papers: Intervalley coupling for interface-bound electrons…

The conduction band degeneracy in Si is detrimental to quantum computing based on spin qubits, for which a nondegenerate ground orbital state is desirable. This degeneracy is lifted at an interface with an insulator as the spatially abrupt…

Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can…

Interface states in a silicon/barrier junction break the silicon valley degeneracy near the interface, a desirable feature for some Si quantum electronics applications. Within a minimal multivalley tight-binding model in one dimension, we…

(001) Si spin qubits are being intensively studied because they have structures similar to that of CMOS devices currently being produced, and thus have the advantage of utilizing state-of-the-art miniaturization, integration, and…

Research on Si quantum dot spin qubits is motivated by the long spin coherence times measured in Si, yet the orbital spectrum of Si dots is increased as a result of the valley degree of freedom. The valley degeneracy may be lifted by the…

Interface states at a boundary between regions with different spin-orbit interactions (SOIs) in two-dimensional (2D) electron systems are investigated within the one-band effective mass method with generalized boundary conditions for…

Interface disorder and its effect on the valley degeneracy of the conduction band edge remains among the greatest theoretical challenges for understanding the operation of spin qubits in silicon. Here, we investigate a counterintuitive…

The performance and scalability of silicon spin qubits depend directly on the value of the conduction band valley splitting. In this work, we investigate the influence of electromagnetic fields and the interface width on the valley…

Intervalley mixing between conduction-band states in low-dimensional Si/SiGe heterostructures induces splitting between nominally degenerate energy levels. The symmetric double-valley effective mass approximation and the empirical…

While bulk silicon has long been understood to exhibit relatively weak spin-orbit coupling (SOC), confinement of electrons to quantum dots (QDs) at a silicon heterointerface results in significantly larger SOC. This is a concern for…

Silicon spin qubits are marred by the valley degeneracy of the conduction band. In a nanodevice, the degeneracy is lifted by interfaces and alloy disorder, but the arising valley splitting is small, of order 100 $\mu$eV in Si/SiGe quantum…

Spin splitting of conduction electron states has been analyzed for all possible point symmetries of SiGe quantum well structures. A particular attention is paid to removal of spin degeneracy caused by the rotoinversion asymmetry of a (001)…

A seemingly anomalous enhancement of electron mobility in strained silicon inversion layers at high sheet densities has exposed a conspicuous gap between device physics theory and experiment in recent years. We show that the root of this…

Electrons in condensed matter may transition into a variety of broken-symmetry phase states due to electron-electron interactions. Applying diverse mean-field approximations to the interaction term is arguably the simplest way to identify…

Electronic spins in Silicon (Si) are rising contenders for qubits -- the logical unit of quantum computation-- owing to its outstanding spin coherence properties and compatibility to standard electronics. A remarkable limitation for spin…

Flat bands result in a divergent density of states and high sensitivity to interactions in physical systems. While such bands are well known in systems under magnetic fields, their realization and behavior in zero-field settings remain…

Spin-orbit interaction affects the band structure of topological insulators beyond the opening of an inverted gap in the bulk bands, and the understanding of its effects on the surface states is of primary importance to access the…

Valley-orbit coupling is a key parameter for a silicon quantum dot in determining its suitability for applications in quantum information processing. In this paper we study the effect of interface steps on the magnitude and phase of…

Understanding strongly interacting electrons enables the design of materials, nanostructures and devices. Developing this understanding relies on the ability to tune and control electron-electron interactions by, e.g., confining electrons…

Complex electronic band structures, with multiple valleys or bands at the same or similar energies can be beneficial for thermoelectric performance, but the advantages can be offset by inter-valley and inter-band scattering. In this paper,…