Related papers: Strongly enhanced photon collection from diamond d…
Silicon-vacancy (SiV) color centers in diamond have great potential for optical sensing and bio-imaging applications. However, the fabrication of large-scale high-density SiV centers in diamond remains difficult. Here, we report a promising…
We realize a potential platform for an efficient spin-photon interface, namely negatively-charged silicon-vacancy centers in a diamond membrane coupled to the mode of a fully-tunable, fiber-based, optical resonator. We demonstrate that…
The spatial resolution and fluorescence signal amplitude in stimulated emission depletion (STED) microscopy is limited by the photostability of available fluorophores. Here, we show that negatively-charged silicon vacancy (SiV) centers in…
The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission peaks at 593.5 nm, 620.3 nm, 630.7 nm and 646.7 nm) are…
The negatively-charged nitrogen-vacancy center (NV) in diamond forms a versatile system for quantum sensing applications. Combining the advantageous properties of this atomic-sized defect with scanning probe techniques such as atomic force…
We experimentally demonstrate a simple and robust optical fibers based method to achieve simultaneously efficient excitation and fluorescence collection from Nitrogen-Vacancy (NV) defects containing micro-crystalline diamond. We fabricate a…
Optical coupling of an ensemble of silicon-vacancy (SiV) centers to single-crystal diamond microdisk cavities is demonstrated. The cavities are fabricated from a single-crystal diamond membrane generated by ion implantation and,…
The use of diamond color centers such as the nitrogen-vacancy (NV) center is increasingly enabling quantum sensing and computing applications. Novel concepts like cavity coupling and readout, laser threshold magnetometry and multi-pass…
The negatively charged nitrogen-vacancy (NV) center is one of the most significant and widely studied defects in diamond that plays a prominent role in quantum technologies. The precise engineering of the location and concentration of NV…
Quantum diamond microscopy (QDM), which employs nitrogen-vacancy (NV) center ensembles, is a promising approach to quantitatively imaging magnetic fields with both high resolution that approaches the diffraction limit and a wide field of…
Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate…
Scalable realizations of quantum network technologies utilizing the nitrogen vacancy center in diamond require creation of optically coherent NV centers in close proximity to a surface for coupling to optical structures. We create single NV…
Color centers in diamond are promising candidates for quantum nanosensing applications. The efficient collection of the optical signal is the key to achieving high sensitivity and resolution, but it is limited by the collection optics.…
We demonstrate quantum interference between indistinguishable photons emitted by two nitrogen-vacancy (NV) centers in distinct diamond samples separated by two meters. Macroscopic solid immersion lenses are used to enhance photon collection…
The nitrogen-vacancy center in diamond, owing to its optically addressable and long-lived electronic spin, is an attractive resource for the generation of remote entangled states. However, the center's low native fraction of coherent photon…
We created dense ensembles of negatively charged nitrogen-vacancy (NV-) centers in diamond by neutron and electron irradiation for applications in hybrid quantum systems and magnetometry. We characterize fluorescence intensity, optical and…
Although the spin properties of superficial shallow nitrogen-vacancy (NV) centers have been the subject of extensive scrutiny, considerably less attention has been devoted to studying the dynamics of NV charge conversion near the diamond…
We experimentally demonstrate the integration of silicon-vacancy centers in nanodiamonds (SiV-NDs) with an optical nanofiber (ONF). We grow SiV-NDs on seed NDs dispersed on a quartz substrate using a microwave plasma-assisted chemical vapor…
Single silicon vacancy (SiV) color centers in diamond have recently shown the ability for high brightness, narrow bandwidth, room temperature single photon emission. This work develops a model describing the three level population dynamics…
We present an in-situ counted ion implantation experiment reducing the error on the ion number to 5 % enabling the fabrication of high-yield single photon emitter devices in wide bandgap semiconductors for quantum applications. Typical…