Related papers: Strain in Semiconductor Core-Shell Nanowires
The authors study the elastic deformation field in lattice-mismatched core-shell nanowires with single and multiple shells. The authors consider infinite wires with a hexagonal cross section under the assumption of translational symmetry.…
Strain engineering in semiconductor nanostructures offers a promising route to optimize electronic and optical properties for advanced quantum technologies. This study explores the relationship between core and shell thicknesses and strain…
The strain configuration induced by the lattice mismatch in a core-shell nanowire is calculated analytically, taking into account the crystal anisotropy and the difference in stiffness constants of the two materials. The method is applied…
Strain has a crucial effect on the optical and electronic properties of nanostructures. We calculate the atomistic strain distribution in silicon nanocrystals up to a diameter of 3.2 nm embedded in an amorphous silicon dioxide matrix. A…
We present a finite-strain model that is capable of describing the large deformations in bent nanowire heterostructures. The model incorporates a nonlinear strain formulation derived from the first Piola-Kirchhoff stress tensor, coupled…
We study theoretically the low-energy phonons and the static strain in cylindrical core/shell nanowires (NWs). Assuming pseudomorphic growth, isotropic media, and a force-free wire surface, we derive algebraic expressions for the dispersion…
Strain plays a critical role in the properties of materials. In silicon and silicon-germanium, strain provides a mechanism for control of both carrier mobility and band offsets. In materials integra-tion, strain is typically tuned through…
We preform large-scale \emph{ab initio} density functional theory calculations to study the lattice strain and the vibrational properties of colloidal semiconductor core-shell nanoclusters with up to one thousand atoms (radii up to…
Core-shell nanowires made of Si and Ge can be grown experimentally with excellent control for different sizes of both core and shell. We have studied the structural properties of Si/Ge and Ge/Si core-shell nanowires aligned along the…
Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct band gap at mid-infrared wavelengths. Here, we investigate the effect of strain on the growth of GeSn alloys in a Ge/GeSn core/shell…
Strain modulated electronic properties of Si/Ge core-shell nanowires along [110] direction were reported based on first principles density-functional theory calculations. Particularly, the energy dispersion relationship of the…
The great possibilities for strain engineering in core/shell nanowires have been explored as an alternative route to tailor the properties of binary III-V semiconductors without changing their chemical composition. In particular, we…
Strain represents an ubiquitous feature in semiconductor heterostructures, and can be engineered by different means in order to improve the properties of various devices, including advanced MOSFETs and spin-based qubits. However, its…
We investigated the electronic properties of strained Si/Ge core-shell nanowires along the [110] direction using first principles calculations based on density-functional theory. The diameter of the studied core-shell wire is up to 5 nm. We…
A recently proposed node-based uniform strain virtual element method (NVEM) is here extended to small strain elastoplastic solids. In the proposed method, the strain is averaged at the nodes from the strain of surrounding linearly precise…
The finite strain theory is reformulated in the frame of the Tangential Differential Calculus (TDC) resulting in a unification in a threefold sense. Firstly, ropes, membranes and three-dimensional continua are treated with one set of…
Within the framework of the Landau-Ginzburg-Devonshire approach we explore the impact of elastic anisotropy, electrostriction, flexoelectric couplings, and mismatch strain on the domain structure morphology in ferroelectric core-shell…
Strained nanowires with varying InAs/InP core-shell thicknesses were grown using Chemical Beam Epitaxy. Microphotoluminescence spectroscopy, performed at low temperature, was then used to study the optical properties of single wires.…
Core-shell Ge-SixGe1-x nanowires (NWs) are expected to contain large strain fields due to the lattice-mismatch at the core/shell interface. Here we report the measurement of core strain in a NW heterostructure using Raman spectroscopy. We…
As device miniaturization approaches the atomic limit, it becomes highly desirable to exploit novel paradigms for tailoring electronic structures and carrier dynamics in materials. Elastic strain can in principle be applied to achieve…