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We compute strain distributions in core-shell nanowires of zinc blende structure. We use both continuum elasticity theory and an atomistic model, and consider both finite and infinite wires. The atomistic valence force-field (VFF) model has…

Mesoscale and Nanoscale Physics · Physics 2010-06-03 Johan Grönqvist , Niels Søndergaard , Fredrik Boxberg , Thomas Guhr , Sven Åberg , H. Q. Xu

Strain engineering in semiconductor nanostructures offers a promising route to optimize electronic and optical properties for advanced quantum technologies. This study explores the relationship between core and shell thicknesses and strain…

We study theoretically the low-energy phonons and the static strain in cylindrical core/shell nanowires (NWs). Assuming pseudomorphic growth, isotropic media, and a force-free wire surface, we derive algebraic expressions for the dispersion…

Mesoscale and Nanoscale Physics · Physics 2014-09-23 Christoph Kloeffel , Mircea Trif , Daniel Loss

Crystal orientation and strain mapping of an individual curved and asymmetrical core-shell hetero-nanowire is performed based on transmission electron microscopy. It relies on a comprehensive analysis of scanning nanobeam electron…

Materials Science · Physics 2023-01-16 Serhii Kryvyi , Slawomir Kret , Piotr Wojnar

The lattice mismatch strain field of core/multishell structures with spherical symmetry is modeled by a linear continuum elasticity approach. The effect of the strain on the energy structure and linear optical absorption in large…

Optics · Physics 2015-06-22 Tudor E. Pahomi , Tiberius O. Cheche

As device miniaturization approaches the atomic limit, it becomes highly desirable to exploit novel paradigms for tailoring electronic structures and carrier dynamics in materials. Elastic strain can in principle be applied to achieve…

Materials Science · Physics 2013-07-10 Xuewen Fu , Cong Su , Qiang Fu , Xinli Zhu , Rui Zhu , Chuanpu Liu , Jun Xu , Ji Feng , Ju Li , Dapeng Yu

Strain plays a critical role in the properties of materials. In silicon and silicon-germanium, strain provides a mechanism for control of both carrier mobility and band offsets. In materials integra-tion, strain is typically tuned through…

This paper is concerned with an asymptotic analysis of the dispersion relation for wave propagation in an elastic layer of uniform thickness. The layer is subject to an underlying simple shear deformation accompanied by an arbitrary uniform…

Mathematical Physics · Physics 2007-05-23 Wasiq Hussain

We employ three dimensional x-ray coherent diffraction imaging to map the lattice strain distribution, and to probe the elastic properties of a single crystalline Ni (001) nanowire grown vertically on an amorphous Si02 || Si substrate. The…

Mesoscale and Nanoscale Physics · Physics 2015-06-05 E. Fohtung , J. W. Kim , Keith T. Chan , Ross Harder , Eric E. Fullerton , O. G. Shpyrko

A theory for conduction electron scattering by inhomogeneous crystal lattice strains is developed, based on the differential geometric treatment of deformations in solids. The resulting fully covariant Schr\"odinger equation shows that the…

Materials Science · Physics 2015-02-02 Koushik Viswanathan , Srinivasan Chandrasekar

We present a finite-strain model that is capable of describing the large deformations in bent nanowire heterostructures. The model incorporates a nonlinear strain formulation derived from the first Piola-Kirchhoff stress tensor, coupled…

Mesoscale and Nanoscale Physics · Physics 2025-01-17 Yiannis Hadjimichael , Oliver Brandt , Christian Merdon , Costanza Manganelli , Patricio Farrell

We present a new first-order approach to strain-engineering of graphene's electronic structure where no continuous displacement field $\mathbf{u}(x,y)$ is required. The approach is valid for negligible curvature. The theory is directly…

Mesoscale and Nanoscale Physics · Physics 2013-10-15 Salvador Barraza-Lopez , Alejandro A. Pacheco Sanjuan , Zhengfei Wang , Mihajlo Vanevic

Strain and rotation fields of dislocations in monolayer graphene have been mapped in a recent experiment. These fields are finite everywhere and differ from those given by linear elasticity which does not consider rotation explicitly and…

Mesoscale and Nanoscale Physics · Physics 2012-07-25 L. L. Bonilla , A. Carpio

Under the application of a force, a material will deform and, hence, the crystal lattice will experience strain. This induced strain will alter the electronic properties of the material. In particular, strain in graphene generates an…

Mesoscale and Nanoscale Physics · Physics 2014-07-08 J. A. Crosse

We study the three-dimensional deformation field induced by an axial (In,Ga)N segment in a GaN nanowire. Using the finite element method within the framework of linear elasticity theory, we study the dependence of the strain field on the…

Materials Science · Physics 2016-02-11 Thilo Krause , Michael Hanke , Oliver Brandt , Achim Trampert

The spontaneous bending of core-shell nanowires through asymmetric shell deposition has implications for sensors, enabling both parallel fabrication and creating advantageous out-of-plane nanowire sensor geometries. This study investigates…

Applied Physics · Physics 2025-01-03 Spencer McDermott , Trevor R. Smith , Ryan B. Lewis

The giant magnetoimpedance effect in composite wires consising of a non-magnetic inner core and soft magnetic shell is studied theoretically. It is assumed that the magnetic shell has a helical anisotropy. The current and field…

Materials Science · Physics 2007-05-23 N. A. Buznikov , A. S. Antonov , A. B. Granovsky , C. G. Kim , C. O. Kim , X. P. Li , S. S. Yoon

We study vortex current distributions in narrow thin-film superconducting strips. If one defines the vortex core ``boundary" as a curve where the current reaches the depairing value, intriguing features emerge. Our conclusions based on the…

Superconductivity · Physics 2020-02-18 V. G. Kogan , M. Ichioka

Core-shell nanowires made of Si and Ge can be grown experimentally with excellent control for different sizes of both core and shell. We have studied the structural properties of Si/Ge and Ge/Si core-shell nanowires aligned along the…

The great possibilities for strain engineering in core/shell nanowires have been explored as an alternative route to tailor the properties of binary III-V semiconductors without changing their chemical composition. In particular, we…

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