Related papers: Two-dimensional surface charge transport in topolo…
We study the effect of electron-phonon interactions on the electrical conductance of a helical edge state of a two-dimensional topological insulator. We show that the edge deformation caused by bulk acoustic phonons modifies the spin…
We study the main intra-band and inter-band transport properties at zero temperature of free electron-like system undergoing a topological reconstruction of the Fermi surface for the two-dimensional and three-dimensional case. The…
We study thermal and electrical transport in metals and superconductors near a quantum phase transition where antiferromagnetic order disappears. The same theory can also be applied to quantum phase transitions involving the loss of certain…
A Drude-Boltzmann theory is used to calculate the transport properties of bilayer graphene. We find that for typical carrier densities accessible in graphene experiments, the dominant scattering mechanism is overscreened Coulomb impurities…
We study low energy spin and charge transport through a 1D Mott-Hubbard insulator of finite length $L$ attached to Fermi liquid reservoirs characterized by different chemical potentials for electrons of opposite spin polarizations as it…
Using the semi-classical Boltzmann theory, we calculate the conductivity as function of the carrier density. As usually, we include the scattering from charged impurities, but conclude that the estimated impurity density is too low in order…
Motivated by the transmission of topological surface states through atomic scale steps, we study the transport of gapless Dirac fermions on hyperbolic surfaces. We confirm that, independent of the curvature of the hyperbolae and the…
We study disorder effects on the surface states of the topological insulator Bi$_2$Se$_3$ close to the topologically protected crossing point. Close to charge neutrality, local fluctuations in carrier density arising from the random charged…
We investigate scattering of the topological surface state of a three-dimensional time-reversal invariant topological insulator when graphene is deposited on the topological-insulator surface. Specifically, we consider the (111) surface of…
We consider multi-terminal transport through a flake of rectangular shape of a two-dimensional topological insulator in the presence of an in-plane magnetic field. This system has been shown to be a second-order topological insulator, thus…
We present low-temperature transport measurements of a gate-tunable thin film topological insulator system that features high mobility and low carrier density. Upon gate tuning to a regime around the charge neutrality point, we infer an…
The scattering of carriers by charged dislocations in semiconductors is studied within the framework of the linearized Boltzmann transport theory with an emphasis on examining consequences of the extreme anisotropy of the scattering…
A density-functional-theory based relativistic scattering formalism is used to study charge transport through thin Pt films with room temperature lattice disorder. A Fuchs-Sondheimer specularity coefficient $p \sim 0.5$ is needed to…
Topological states of matter have attracted a lot of attention due to their many intriguing transport properties. In particular, two-dimensional topological insulators (2D TI) possess gapless counter propagating conducting edge channels,…
We study the properties of a line junction which separates the surfaces of two three-dimensional topological insulators. The velocities of the Dirac electrons on the two surfaces may be unequal and may even have opposite signs. For a time…
The mechanism of the anomalous Hall transport phenomena, if it is of the intrinsic or extrinsic origin, has been controversial. We present a unified theory of them for ferromagnetic metals with dilute impurities at the zero temperature, in…
In the three-dimensional topological insulator (TI), the physics of doped semiconductors exists literally side-by-side with the physics of ultra-relativistic Dirac fermions. This unusual pairing creates a novel playground for studying the…
Two-dimensional semiconductors are structurally ideal channel materials for the ultimate atomic electronics after silicon era. A long-standing puzzle is the low carrier mobility ({\mu}) in them as compared with corresponding bulk…
To harness the true potential of topological insulators as quantum materials for information processing, it is imperative to maximise topological surface state conduction, while simulateneously improving their quantum coherence. However,…
Crystals with symmetry-protected topological order, such as topological insulators, promise coherent spin and charge transport phenomena even in the presence of disorder at room temperature. Still, a major obstacle towards an application of…