Related papers: Nanostructures in p-GaAs with improved tunability
We studied ballistic transport across a quantum point contact (QPC) defined in a high-quality, GaAs (311)A two-dimensional (2D) hole system using shallow etching and top-gating. The QPC conductance exhibits up to 11 quantized plateaus. The…
We report on low temperature measurements in a fully tunable carbon nanotube double quantum dot. A new fabrication technique has been used for the top-gates in order to avoid covering the whole nanotube with an oxide layer as in previous…
Dynamically tunable nanoengineered structures for coloration show promising applications in sensing, displays, and communication. However, their potential challenge remains in having a scalable manufacturing process over large scales in…
Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended…
Polymers with the same chemical composition can provide different properties by reducing the dimension or simply by altering their nanostructure. Recent literature works report hundreds of examples of advances methods in the fabrication of…
In an all-van der Waals heterostructure, the active layer, gate dielectrics and gate electrodes are assembled from two-dimensional crystals that have a low density of atomic defects. This design allows two-dimensional electron systems with…
We report on the development of Electron Holographic Tomography towards a versatile potential measurement technique, overcoming several limitations, such as a limited tilt range, previously hampering a reproducible and accurate…
We investigate the effect of electrostatic gating on the thermoelectric power factor of p-type Si nanowires (NWs) of up to 20nm in diameter in the [100], [110] and [111] crystallographic transport orientations. We use atomistic…
Planar semiconductor heterostructures offer versatile device designs and are promising candidates for scalable quantum computing. Notably, heterostructures based on strained germanium have been extensively studied in recent years, with…
The reproducible operation of quantum electronic devices is a key requirement for future quantum information processing and spintronics applications. Traditionally quantum devices have been fabricated from modulation doped heterostructures,…
We predict enhanced electron-hole superfluidity in two coupled electron-hole armchair-edge terminated graphene nanoribbons separated by a thin insulating barrier. In contrast to graphene monolayers, the multiple subbands of the nanoribbons…
Nanowires are versatile nanostructures, which allow an exquisite control over bandgap energies and charge carrier dynamics making them highly attractive as building blocks for a broad range of photonic devices. For optimal solutions…
Topological interface states in one-dimensional superlattices provide spatially localized phonon modes protected by the topology of the underlying band structure. In GaAs/AlAs distributed Bragg reflectors (DBRs), such states can be…
Electrochemical methods have recently become an interesting tool for fabricating and characterizing nanostructures at room temperature. Simplicity, low cost and reversibility are some of the advantages of this technique that allows to work…
We describe a systematic study of the synthesis, microstructure and magnetization of hybrid ferromagnet-semiconductor nanomaterials comprised of MnAs nanoclusters embedded in a p-doped GaAs matrix. These samples are created during the in…
Quantum dots exhibit reproducible conductance fluctuations at low temperatures due to electron quantum interference. The sensitivity of these fluctuations to the underlying disorder potential has only recently been fully realized. We…
We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample…
Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots (QDs) fabricated by electron-beam lithography and low impact reactive-ion etching exhibit highly homogeneous luminescence. Single quantum dots display spectral emission with peak…
Over the last decade, progress in wide bandgap, III-V materials systems based on gallium nitride (GaN) has been a major driver in the realization of high power and high frequency electronic devices. Since the highly conductive,…
Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on…