Related papers: Influence of Coulomb correlations on the quantum w…
The optical response of a heavily doped quantum well, with two occupied subbands, has been investigated as a function of the electronic density. It is shown that the two optically active transitions are mutually coupled by dipole-dipole…
We present the first magneto-absorption studies of coupled electron double layers in the quantum Hall regime. Optical absorption spectra in the vicinity of total filling factor nu = 1 reveal intriguing behavior that have no analog in the…
We investigate the ground--state electronic properties of the symmetrically-- doped semiconductor quantum well in the presence of a homogeneous electric field. In this paper we examined the effect of the electric field and carrier…
Using dynamical-mean-field theory, we investigate the electronic properties of quantum wells consisting of a $t^1_{2g}$-electron system with strong correlations. The special focus is on the subband structure of such quantum wells. The…
We present a quantum model to calculate the dipole-dipole coupling between electronic excitations in the conduction band of semiconductor quantum wells. We demonstrate that the coupling depends on a characteristic length, related to the…
Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different temperatures and modeling of conduction-band electrons. For the…
Intersubband absorption in modulation-doped quantum wells is usually appropriately described as a collective excitation of the confined two-dimensional electron gas. At sufficiently low electron density and low temperatures, however, the…
We report on the properties of a system of interacting electrons in a narrow channel in the quantum Hall effect regime. It is shown that an increase in the strength of the Coulomb interaction causes abrupt changes in the width of the…
We observed room-temperature intersubband transitions at 1.26 microns in n-doped type-II In$_{0.3}$Ga$_{0.7}$As/AlAs strained quantum wells. An improved tight-binding model was used to optimize the structure parameters in order to obtain…
We consider the effects of electron-hole interaction, 2D confinement and applied electric field on direct allowed transitions in III-V semiconductors, with InGaAs as a study case. Instead of Coulomb interaction, we use Gaussian potential.…
We present a theoretical analysis of the effect of dielectric confinement on the Coulomb interaction in dielectrically modulated quantum structures. We discuss the implications of the strong enhancement of the electron-hole and…
Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity…
We study a model of a covalent band insulator with on-site Coulomb repulsion at half-filling using dynamical mean-field theory. Upon increasing the interaction strength the system undergoes a discontinuous transition from a correlated band…
We point out a novel manifestation of many-body correlations in the linear optical response of electrons confined in a quantum well. Namely, we demonstrate that along with conventional absorption peak at frequency close to intersubband…
We study the linear optical absorption of bulk semiconductors in the presence of a homogeneous constant (dc) electric field with an approach suitable for including excitonic effects while working with many-band models. The absorption…
At temperatures comparable to the Fermi temperature, we have measured a plasmon enhanced Coulomb drag in a GaAs/AlGaAs double quantum well electron system. This measurement provides a probe of the many-body corrections to the coupled…
We examine the effects of electron-electron interactions on transport between edge states in a multilayer integer quantum Hall system. The edge states of such a system, coupled by interlayer tunneling, form a two-dimensional, chiral metal…
We study within the linear response theory the far-infrared optical absorption spectrum and the collective excitations of an asymmetric, wide parabolic Al$_x$Ga$_{1-x}$As quantum well, consisting of two half-parabolas of different…
Electronic states and transport phenomena in semiconductor quantum dots are studied theoretically. Taking account of the electron-electron Coulomb interaction by the exact diagonalization method, the ground state and low-lying excited…
A microscopic theory is used to study the optical properties of semiconductor quantum dots. The dephasing of a coherent excitation and line-shifts of the interband transitions due to carrier-carrier Coulomb interaction and carrier-phonon…