Related papers: Highly sensitive, photon number resolving detector…
Photoproduction data collected with the H1 detector at HERA in 1994 are used to study the cross-sections for inclusive charged particle production and the structure of the photon. The differential cross-sections dsigma/dpT2, for |eta| < 1…
We have studied microwave response of a high-mobility two-dimensional electron system (2DES) contacted by two side electrodes. Using kinetic inductance of the 2DES and inter-electrode capacitance, we have constructed a subwavelength 2D…
Transition-edge sensors (TES) are photon-number resolving calorimetric spectrometers with near unit efficiency. Their recovery time, which is on the order of microseconds, limits the number resolving ability and timing accuracy in high…
We investigate waveguide-integrated plasmonic graphene photodetector operating based on the hot carrier photo-bolometric effect, which is characterized simultaneously by high responsivity on the scale of hundreds of AW-1 and high speed on…
A well-balanced detector with high sensitivity and low noise is presented in this paper. The two-stage amplification structure is used to increase electronic gain while keeping an effective bandwidth of about 70 MHz. In order to further…
Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable…
Layered two-dimensional (2D) semiconductors have been widely exploited in photodetectors due to their excellent electronic and optoelectronic properties. To improve their performance, photogating, photoconductive, photovoltaic,…
We have developed and successfully used several innovative designs of detectors with solid photocathodes. The main advantage of these detectors is that rather high gains (>10E4) can be achieved in a single multiplication step. This is…
We design and experimentally characterize a balanced homodyne detector optimized for high-repetition-rate (100 MHz) pulsed optical sources. Unlike conventional transimpedance-amplifier architectures, which suffer from nonlinearities and…
The generation of indistinguishable single photons is a fundamental requirement for future quantum technologies, particularly in quantum repeater networks and for distributed quantum computing based on entanglement distribution. However,…
We have fabricated a grating-gate InGaAs/GaAs field-effect transistor structure with narrow slits between the grating gate fingers. The resonant photoconductive response of this structure has been measured in the sub-terahertz frequency…
Thanks to intrinsically short electronic relaxation on the ps time scale, III-V semiconductor unipolar devices are ideal candidates for ultrahigh-speed operation at mid-infrared frequencies. In this work, antenna-coupled, GaAs-based multi…
High-mobility field effect transistors can serve as resonant detectors of terahertz radiation due to excitation of plasmons in the channel. The modeling of these devices previously relied either on approximate techniques, or complex…
Due to its high charge carrier mobility, broadband light absorption, and ultrafast carrier dynamics, graphene is a promising material for the development of high-performance photodetectors. Graphene-based photodetectors have been…
The paper reviews recent progress in photodetectors, discussing vacuum-based detectors, semiconductor sensors, and gas-based detectors. The emphasis in this review is on the detection of low light levels, enhanced timing resolution, and…
An array of DEPFET pixels is one of several concepts to implement an active pixel sensor. Similar to PNCCD and SDD detectors, the typically 0.45 mm thick silicon sensor is fully depleted by the principle of sideward depletion. They have…
Transition-Edge Sensors (TESs) are very effective photon-number-resolving (PNR) detectors that have enabled many photonic quantum technologies. However, their relatively slow thermal recovery time severely limits their operation rate in…
A photodiode with 0.55$\pm$0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in…
Hybrid integration of plasmonics and Si photonics is a promising architecture for global microprocessor interconnects. To this end, practical plasmonic devices not only should provide athermal, broadband operation over wavelength-scale…
We report on the detection of single photons with {\lambda} = 8 {\mu}m using a superconducting hot-electron microbolometer. The sensing element is a titanium transition-edge sensor with a volume ~ 0.1 {\mu}m^3 fabricated on a silicon…