Related papers: Peierls-type Instability and Tunable Band Gap in F…
We show that an internal localization mobility edge can appear around the Fermi energy in graphene by introducing impurities in the split-band regimen, or by producing vacancies in the lattice. The edge appears at the center of the spectrum…
Motivated by the results of recent photoemission and tunneling studies, we discuss potential many-body sources of a finite gap in the Dirac fermion spectrum of graphene. Specifically, we focus on the putative Peierls- and Cooper-like…
The combination of the unique properties of graphene with spin polarization and magnetism for the design of new spintronic concepts and devices has been hampered by the small Coulomb interaction and the tiny spin-orbit coupling of carbon in…
The 2007 discovery of quantized conductance in HgTe quantum wells delivered the field of topological insulators (TIs) its first experimental confirmation. While many three-dimensional TIs have since been identified, HgTe remains the only…
We report on systematic study of electronic transport in low-biased, disordered graphene nanowires. We reveal the emergence of unipolar transport as the defect concentration increases beyond 0.3\% where an almost insulating behaviour is…
Low-energy electronic behavior in graphite crystals is highly dependent on the relative stacking arrangement of the constituent layers. Topologically non-trivial electronic states can arise due to interrupted rhombohedral (ABC) stacking,…
The importance of controlling both the charge carrier density and the band gap of a semiconductor cannot be overstated, as it opens the doors to a wide range of applications, including, e.g., highly-tunable transistors, photodetectors, and…
We experimentally demonstrate a simple graphene/ ferrolectric device, termed Ferrotronic (electronic effect from ferroelectric) device in which the band-structure of single-layer graphene is modified. The device architecture consists of…
We report first-principles calculations on antiferromagnetic spin ordering in graphene under biaxial strain. Using hybrid functional calculations, we found that semimetallic graphene sheets undergo a transition to antiferromagnetic…
We present the electronic band structures of states with the same symmetry as the three-sublattice planar antiferromagnetic order of the triangular lattice. Such states can also be defined on the honeycomb lattice provided the spin density…
Dirac electrons in clean graphene can mediate the interactions between two localized magnetic moments. The functional form of the RKKY interaction in pristine graphene is specified by two main features: (i) an atomic scale oscillatory part…
A central feature of many van der Waals (vdW) materials is the ability to precisely control their charge doping, $n$, and electric displacement field, $D$, using top and bottom gates. For devices composed of only a few layers, it is…
Defects in graphene, such as vacancies or adsorbents attaching themselves to carbons, may preferentially take positions on one of its two sublattices, thus breaking the global lattice symmetry. This leads to opening a gap in the electronic…
We theoretically consider the effect of plasmon collective modes on the frequency-dependent conductivity of graphene in the presence of the random static potential of charged impurities. We develop an equation of motion approach suitable…
Spectral gaps in the vibrational modes of disordered solids are key design elements in the synthesis and control of phononic metamaterials that exhibit a plethora of novel elastic and mechanical properties. However, reliably producing these…
The magnetism by the edge states in graphene is investigated theoretically. An instability of the pseudo-spin order of the edge states induces ferrimagnetic order in the presence of the Coulomb interaction. Although the next…
In rhombohedral-stacked few-layer graphene, the very flat energy bands near the charge neutrality point are unstable to electronic interactions, giving rise to states with spontaneous broken symmetries. Using transport measurements on…
In the presence of a finite interlayer displacement field bilayer graphene has an energy gap that is dependent on stacking and largest for the stable AB and BA stacking arrangements. When the relative orientations between layers are twisted…
We theoretically study the effects of electron-electron interaction in twisted bilayer graphene in applied transverse dc electric field. When the twist angle is not very small, the electronic spectrum of the bilayer consists of four Dirac…
The tunability of the dielectric properties induced by the substrate driven interactions (SDI) and the exchange field (M) due to the ferro-magnetic impurities in graphene monolayer on transition metal dichalcogenide (TMDC) (viz., XY2 , X =…