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Related papers: Topological Defects in Graphene: Dislocations and …

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Topological defects can affect the physical properties of graphene in unexpected ways. Harnessing their influence may lead to enhanced control of both material strength and electrical properties. Here we present a new class of topological…

The interplay between topological defects, such as dislocations or disclinations, and the electronic degrees of freedom in graphene has been extensively studied. In the literature, for the study of this kind of problems, it is in general…

Strongly Correlated Electrons · Physics 2023-06-07 Nicolás Fernández , Pierre Pujol , Mario Solís , Teofilo Vargas

We demonstrate insights into the three-dimensional structure of defects in graphene, in particular grain boundaries, obtained via a new approach from two transmission electron microscopy images recorded at different angles. The structure is…

Topological defects (e.g. pentagons, heptagons and pentagon-heptagon pairs) have been widely observed in large scale graphene and have been recognized to play important roles in tailoring the mechanical and physical properties of…

Mesoscale and Nanoscale Physics · Physics 2018-03-02 Bo Ni , Teng Zhang , Jiaoyan Li , Xiaoyan Li , Huajian Gao

Grain boundaries are topological defects that often have a disordered character. Disorder implies that understanding general trends is more important than accurate investigations of individual grain boundaries. Here we present trends in the…

Materials Science · Physics 2010-11-24 Sami Malola , Hannu Häkkinen , Pekka Koskinen

Geometrical objects describing the material geometry of continuously defective graphene sheets are introduced and their compatibility conditions are formulated. Effective edge dislocations embedded in the Riemann-Cartan material space and…

Mathematical Physics · Physics 2015-07-31 Andrzej Trzesowski

In this work we will focus on the effects produced by topological disorder on the electronic properties of a graphene plane. The presence of this type of disorder induces curvature in the samples of this material, making quite difficult the…

Strongly Correlated Electrons · Physics 2008-11-26 Alberto Cortijo , María A. H. Vozmediano

In light of the race towards macroscale superlubricity of graphitic contacts, the effect of grain boundaries on their frictional properties becomes of central importance. Here, we elucidate the unique frictional mechanisms characterizing…

Mesoscale and Nanoscale Physics · Physics 2020-08-04 Xiang Gao , Wengen Ouyang , Oded Hod , Michael Urbakh

Defects in solid commonly limit mechanical performance of the material. However, recent measurements reported that the extraordinarily high strength of graphene is almost retained with the presence of grain boundaries. We clarify in this…

Mesoscale and Nanoscale Physics · Physics 2014-02-06 Zhigong Song , Jian Wu , Zhiping Xu

Incomplete stacking dislocations are predicted to form at edges of the shorter upper layer in two-dimensional hexagonal bilayers upon stretching the longer bottom layer. A concept of the edge Burgers vector is introduced to describe such…

Mesoscale and Nanoscale Physics · Physics 2017-08-07 Irina V. Lebedeva , Andrey A. Knizhnik , Andrey M. Popov

Grain boundaries in epitaxial graphene on the SiC(000$\bar{1}$) substrate are studied using scanning tunneling microscopy and spectroscopy. All investigated small-angle grain boundaries show pronounced out-of-plane buckling induced by the…

A polycrystalline graphene consists of perfect domains tilted at angle {\alpha} to each other and separated by the grain boundaries (GB). These nearly one-dimensional regions consist in turn of elementary topological defects, 5-pentagons…

Materials Science · Physics 2010-09-16 Yuanyue Liu , Boris I. Yakobson

Topological line defects in graphene represent an ideal way to produce highly controlled structures with reduced dimensionality that can be used in electronic devices. In this work we propose using extended line defects in graphene to…

We present a general method to identify topological materials by studying the local electronic density $\delta \rho \left(\boldsymbol{r}\right)$. More specifically, certain types of defects or spatial textures such as vacancies, turn…

Mesoscale and Nanoscale Physics · Physics 2023-07-12 Yuval Abulafia , Amit Goft , Nadav Orion , Eric Akkermans

We systematically investigate the transmission of charge carriers across the grain-boundary defects in polycrystalline graphene by means of the Landauer-B\"uttiker formalism within the tight-binding approximation. Calculations reveal a…

Mesoscale and Nanoscale Physics · Physics 2014-06-05 Fernando Gargiulo , Oleg V. Yazyev

The properties of polycrystalline materials are often dominated by the size of their grains and by the atomic structure of their grain boundaries. These effects should be especially pronounced in 2D materials, where even a line defect can…

Perturbations of the two dimensional carbon lattice of graphene, such as grain boundaries, have significant influence on the charge transport and mechanical properties of this material. Scanning tunneling microscopy measurements presented…

We have characterized the structure of 176 different single-layer graphene grain boundaries using $>$1000 experimental HRTEM images using a semi-automated structure processing routine. We introduce a new algorithm for generating grain…

Materials Science · Physics 2015-08-04 Colin Ophus , Ashivni Shekhawat , Haider I Rasool , Alex Zettl

Most materials in available macroscopic quantities are polycrystalline. Graphene, a recently discovered two-dimensional form of carbon with strong potential for replacing silicon in future electronics, is no exception. There is growing…

Mesoscale and Nanoscale Physics · Physics 2010-09-28 Oleg V. Yazyev , Steven G. Louie

Topological lattice defects, such as dislocations and grain boundaries (GBs), are ubiquitously present in the bulk of quantum materials and externally tunable in metamaterials. In terms of robust modes, localized near the defect cores, they…

Mesoscale and Nanoscale Physics · Physics 2023-09-18 Daniel J. Salib , Vladimir Juričić , Bitan Roy
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