Related papers: Dirac cone engineering in Bi$_2$Se$_3$ thin films
Using an ab-initio density functional theory based electronic structure method with a semi-local density approximation, we study thin-film electronic properties of two topological insulators based on ternary compounds of Tl (Thallium) and…
Surface Dirac cones in three-dimensional topological insulators have generated tremendous and enduring interest for almost two decades owing to hosting a multitude of exotic properties. In this work, we unveil the existence of two types of…
The non-trivial topology of the three-dimensional (3D) topological insulator (TI) dictates the appearance of gapless Dirac surface states. Intriguingly, when a 3D TI is made into a nanowire, a gap opens at the Dirac point due to the quantum…
Topological insulators represent a new quantum state of matter that are insulating in the bulk but metallic on the edge or surface. In the Dirac surface state, it is well-established that the electron spin is locked with the crystal…
The massless Dirac electrons found at topological insulator surfaces are thought to be influenced very little by weak, non-magnetic disorder. However, a resonance effect of strongly perturbing non-magnetic impurities has been theoretically…
Gated terahertz cyclotron resonance measurements on epitaxial Bi2Se3 thin films capped with In2Se3 enable the first spectroscopic characterization of a single topological interface state from the vicinity of the Dirac point to above the…
Three-dimensional (3D) topological Dirac semimetal, when thinned down to 2D few layers, is expected to possess gapped Dirac nodes via quantum confinement effect and concomitantly display the intriguing quantum spin Hall (QSH) insulator…
Topological insulators (TIs) are emergent materials with unique band structure, which allow the study of quantum effect in solids, as well as contribute to high performance quantum devices. To achieve the better performance of TI, here we…
Three-dimensional topological insulators are characterized by insulating bulk state and metallic surface state involving Dirac fermions that behave as massless relativistic particles. These Dirac fermions are responsible for achieving a…
Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to…
Many applications for topological insulators (TIs) as well as new phenomena require devices with reduced dimensions. While much progress has been made to realize thin films of TIs with low bulk carrier density, nanostructures have not yet…
Topological insulators are new states of quantum matter with surface states protected by the time-reversal symmetry. In this work, we perform first-principle electronic structure calculations for $Sb_2Te_3$, $Sb_2Se_3$, $Bi_2Te_3$ and…
The extraordinary electronic properties of Dirac materials, the two-dimensional partners of Weyl semimetals, arise from the linear crossings in their band structure. When the dispersion around the Dirac points is tilted, the emergence of…
Topological insulators are a novel class of quantum matter with a gapped insulating bulk yet gapless spin helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in…
Topological insulators (TIs) are novel materials that manifest spin-polarized Dirac states on their surfaces or at interfaces made with conventional matter. We have measured the electron kinetics of bulk doped TI Bi$_2$Se$_3$ with angle…
Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI…
Using the k.p theory and first-principles simulations, we report that applying a moderate pressure (> 0.6 GPa) on black phosphorus can diminish its band gap and produce one-dimensional and even two-dimensional (2D) Dirac cones,…
When electrons are subject to a large external magnetic field, the conventional charge quantum Hall effect \cite{Klitzing,Tsui} dictates that an electronic excitation gap is generated in the sample bulk, but metallic conduction is permitted…
Gapless Dirac surface states are protected at the interface of topological and normal band insulators. In a binary superlattice bearing such interfaces, we establish that valley-dependent dimerization of symmetry-unrelated Dirac surface…
Topological insulator (TI) materials such as Bi2Te3 and Bi2Se3 have attracted strong recent interests. Large scale, high quality TI thin films are important for developing TI-based device applications. In this work, structural and…