Related papers: Quantum Hall effect near the charge neutrality poi…
The transport properties of the two-dimensional system in HgTe-based quantum wells containing simultaneously electrons and holes of low densities are examined. The Hall resistance, as a function of perpendicular magnetic field, reveals an…
Nonlocal resistance is studied in a two-dimensional system with a simultaneous presence of electrons and holes in a 20 nm HgTe quantum well. A large nonlocal electric response is found near the charge neutrality point (CNP) in the presence…
When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two- component model of coexisting electrons and holes…
Unconventional magneto-transport fingerprints in the quantum Hall regime (with applied magnetic field from one to several tens of Tesla) in chemically functionalized graphene are reported. Upon chemical adsorption of monoatomic oxygen (from…
The quantum Hall effect, which exhibits a number of unusual properties, is studied in a gated 1000-nm-thick HgTe film, nominally a three-dimensional system. A weak zero plateau of Hall resistance, accompanied by a relatively small value of…
We studied the unusual Quantum Hall Effect (QHE) near the charge neutrality point (CNP) in high-mobility graphene sample for magnetic fields up to 18 T. We observe breakdown of the delocalized QHE transport and strong increase in…
We present here our recent quantum transport results around the charge neutrality point (CNP) in a type-II InAs/GaSb field-effect transistor. At zero magnetic field, a conductance minimum close to 4e^2/h develops at the CNP and it follows…
By considering N_e-electrons and N_h-holes together in uniform external magnetic and electric fields, we end up with a total Hall conductivity \sigma_{H}^{tot}, which is depending to the difference between N_e and N_h and becomes null when…
Low temperature magnetoconductance measurements were made in the vicinity of the charge neutrality point. Two origins for the fluctuations were identified close to the CNP. At very low magnetic fields there exist only mesoscopic…
We use geometric considerations to study transport properties, such as the conductivity and Hall coefficient, near the onset of a nesting-driven spin density wave in a simple metal. In particular, motivated by recent experiments on…
We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage…
The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we…
In this paper we investigate a possibility for the existence of an analog of the Quantum Hall Effect for neutral particles with a permanent magnetic moment $\mu$ in the presence of crossed inhomogeneous magnetic and electric fields. We…
We present temperature-dependent magneto-transport experiments around the charge neutrality point in graphene and determine the amplitude of potential fluctuations $s$ responsible for the formation of electron-hole puddles. The experimental…
We theoretically study the electronic band structure and the Hall effect in the negatively-curved three-dimensional (3D) graphene network in magnetic fields. We found that special energy regions appear above and below the zero-energy Landau…
The magnetic field-dependent longitudinal and Hall components of the resistivity rho_xx(H) and rho_xy(H) are measured in graphene on silicon dioxide substrates at temperatures from 1.6 K to room temperature. At charge densities near the…
Quantum electron transport in side-gated graphene Hall bars is investigated in the presence of quantizing external magnetic fields. The asymmetric potential of four side-gates distorts the otherwise flat bands of the relativistic Landau…
The quantum Hall effect is usually observed when the two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum…
We report on magneto-transport measurement in disordered graphene under pulsed magnetic field of up to 57T. For large electron or hole doping, the system displays the expected anomalous Integer Quantum Hall Effect (IQHE) specific to…
The conductivity and Hall effect were measured in CVD-grown monolayer graphene as a function of the gate voltage, $V_{g}$, at temperatures down to $T$ = 2 K and in magnetic fields up to $B$ = 8 T. The minimal conductivity was observed at…