Related papers: Phase Field Modelling of Submonolayer Epitaxial Gr…
Nucleation on top of two-dimensional islands with step edge barriers is investigated using scaling arguments. The nucleation rate is expressed in terms of three basic time scales: The time interval between deposition events, the residence…
Using low energy electron microscopy we observe that Pd deposited on Ru only attaches to small sections of the atomic step edges surrounding Pd islands. This causes a novel epitaxial growth mode in which islands advance in a snakelike…
We develop a theory of nucleation on top of two-dimensional islands bordered by steps with an additional energy barrier $\Delta E_S$ for descending atoms. The theory is based on the concept of the residence time of an adatom on the…
We use a multiscale approach to study a lattice-gas model of submonolayer growth of Fe/Mo(110) by Molecular Beam Epitaxy. To begin with, we construct a two-dimensional lattice-gas model of the Fe/Mo(110) system based on first-principles…
Graphite surfaces interact weakly with molecules compared to other conducting surfaces bringing the molecule-molecule interaction to the foreground. C$_{60}$ on highly oriented pyrolytic graphite is a model system for studying the molecular…
Morphological properties of strained epitaxial films are examined through a mesoscopic approach developed to incorporate both the film crystalline structure and standard continuum theory. Film surface profiles and properties, such as…
A model that describes self diffusion, island nucleation and film growth on FCC(001) metal substrates is presented. The parameters of the model are optimized to describe Cu diffusion on Cu(001), by comparing activation energy barriers to a…
This work describes morphological and crystalline properties of the InAs islands grown on templates created by focused ion beam (FIB) on indium phosphide (InP) substrates. Regular arrangements of shallow holes are created on the InP (001)…
A discrete solid-on-solid model of epitaxial growth is introduced which, in a simple manner, takes into account the effect of an Ehrlich-Schwoebel barrier at step edges as well as the local relaxation of incoming particles. Furthermore a…
Epithelial cells can assemble into cohesive colonies and collectively interact with substrates by generating extracellular forces through focal adhesions. Recently, a molecularly based thermodynamic model, which integrates both the…
We consider a variational model for the formation of islands in heteroepitaxial growth on unbounded domains. We first derive the scaling regimes of the minimal energy in terms of the volume of the film and the amplitude of the…
We use Monte-Carlo simulations to study island formation in the growth of thin semiconducting films deposited on lattice-mismatched substrates. It is known that islands nucleate with critical nuclei of about one atom and grow two…
Effect of an anisotropic detachment on a heteroepitaxial island shape is studied by means of a kinetic Monte Carlo simulation of a square lattice gas model. Only with molecular deposition followed by surface diffusion, islands grow in a…
Thin films are usually obtained by depositing atoms with a continuous flux. We show that using a chopped flux changes the growth and the morphology of the film. A simple scaling analysis predicts how the island densities change as a…
The aggregation of particles in the free molecular regime is determined approximately for situations with a high degree of translational energy equilibration. The mean particle sizes develop linearly in time. Scaling relations are used to…
The distribution of capture zones formed during the nucleation and growth of point islands on a one-dimensional substrate during monomer deposition is considered for general critical island size $i$. A fragmentation theory approach yields…
Pulsed laser epitaxial growth is characterized by high instantaneous deposition rates that leads to the nucleation of transient islands, both on surface terraces, and on top of stable islands formed during previous deposition pulses. We…
The theoretical and experimental status of surfactant mediated semiconductor epitaxial growth is reviewed. We discuss homoepitaxy as well as heteroepitaxy, and emphasize in particular issues related to the mechanism by which surfactants…
The nucleation and growth of point islands during submonolayer deposition on a one-dimensional substrate is simulated for critical island size $i=0,1,2,3$. The small and large size asymptotics for the gap size and capture zone distributions…
We examine the structure and the evolution of Ge islands epitaxially grown on vicinal Si(111) surfaces by scanning tunneling microscopy. Contrary to what is observed on the singular surface, three-dimensional Ge nanoislands form directly…