Related papers: Electron barrier interaction in a vacuum tunneling…
Recent attoclock experiments and theoretical studies regarding the strong-field ionization of atoms by few-cycle infrared pulses revealed new features that have attracted much attention. Here we investigate tunneling ionization and the…
Tunneling of single electrons has been thoroughly studied both theoretically and experimentally during last ten years. By the present time the basic physics is well understood, and creation of useful single-electron devices becomes the…
We consider interaction of an electron with a Bose condensate of atoms having electron affinity. Though states of the electron attached to atoms form a continuous band, tunneling through this band is strongly suppressed by quantum…
Tunneling is one of the most bizarre phenomena in quantum mechanics. An attempt to understand it led to the next natural question of how long does a particle need to tunnel a barrier. The latter gave rise to several definitions such as the…
We study electron transport through single-electron spin-valve transistors in the presence of non-local exchange between the ferromagnetic leads and the central normal-metal island. The Coulomb interaction is described with the orthodox…
We develop an Over Barrier Model for computing charge exchange between ions and one-active-electron atoms at low impact energies. The main feature of the model is the treatment of the barrier crossing process by the electron within a…
We developed the theory of elastic electron tunneling through a potential barrier driven by a strong high-frequency electromagnetic field. It is demonstrated that the driven barrier can be considered as a stationary two-barrier potential…
Tunneling of Bloch electrons through a vacuum barrier introduces new physical effects in comparison with the textbook case of free (plane wave) electrons. For the latter, the exponential decay rate in the vacuum is minimal for electrons…
We present two approaches for studying the uniformity of a tunnel barrier. The first approach is based on measuring single-electron and two-electron tunneling in a hybrid single-electron transistor. Our measurements indicate that the…
Currently, molecular tunnel junctions are recognized as important active elements of various nanodevices. This gives a strong motivation to study physical mechanisms controlling electron transport through molecules. Electron motion through…
In this paper, we introduce the theoretical framework underlying our proposed methodology of verification and validation (V&V) for quantum mechanical emission models using analogous macroscopic electromagnetic systems. We derive the…
We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The…
Spin-dependent ballistic transport through a tunnel barrier is treated within the one-dimensional nearly-free-electron model. The comparison with free electrons reveals significant effects of band gaps, in particular in the bias dependence.…
We have studied tunneling of electrons into multi-wall carbon nanotubes. Nanotube/electrode interfaces with low transparency as well as nanotube/nanotube junctions created with atomic force microscope manipulation have been used. The…
We study the quantum tunnel effect through a potential barrier employing a semiclassical formulation of quantum mechanics based on expectation values of configuration variables and quantum dispersions as dynamical variables. The evolution…
The electronic structure of two vertically coupled quantum dots containing two electrons is investigated in the presence of interdot tunneling. Our approach also includes the interdot exchange and we find that the tunneling is affected by…
The explicit expressions for a nonresonant tunneling current mediated by the bridging units of the molecular wire embedded between the metallic electrodes, are derived. The specific regimes of the charge transmission controlled by…
Entangling two quantum bits by letting them interact is the crucial requirements for building a quantum processor. For qubits based on the spin of the electron, these two-qubit gates are typically performed by exchange interaction of the…
Interband quantum tunneling of electrons in semiconductors is of intense recent interest as the underlying transport mechanism in tunneling field-effect transistors. Such transistors can potentially perform electronic switching with lower…
Classical and quantum dynamics are important limits for the understanding of the transport characteristics of interacting electrons in nanodevices. Here we apply an intermediate semiclassical approach to investigate the dynamics of two…