Related papers: Typical-Medium Theory of Mott-Anderson Localizatio…
We present the metal - insulator transition study of a quantum site percolation model on simple cubic lattice. Transfer matrix method is used to calculate transport properties - Landauer conductance - for the binary distribution of…
Self-consistent theory of electron localization in disordered systems is generalized for the case of interacting electrons. We propose and critically compare a number of possible self-consistency schemes which take into account the lowest…
We study the thermoelectric transport properties in the three-dimensional Anderson model of localization near the metal-insulator transition [MIT]. In particular, we investigate the dependence of the thermoelectric power S, the thermal…
We consider low-temperature behavior of weakly interacting electrons in disordered conductors in the regime when all single-particle eigenstates are localized by the quenched disorder. We prove that in the absence of coupling of the…
We thoroughly analyze the divergences of the irreducible vertex functions occurring in the charge channel of the half-filled Hubbard model in close proximity to the Mott metal-insulator transition (MIT). In particular, by systematically…
We review our recent results on Anderson localization in systems of two interacting particles coupled by contact interactions. Based on an exact mapping to an effective single-particle problem, we numerically investigate the occurrence of…
The physics of Anderson transitions between localized and metallic phases in disordered systems is reviewed. The term ``Anderson transition'' is understood in a broad sense, including both metal-insulator transitions and quantum-Hall-type…
We study how the Mott metal-insulator transition (MIT) is influenced when we deal with electrons with different angular momenta. For lithium we found an essential effect when we include $p$-orbitals in the description of the Hilbert space.…
The Localization Landscape Theory (LLT) offers a classical analogy for understanding Anderson localization through an effective confining potential, whose percolation threshold has been proposed to mark the mobility edge. While this…
The metal-insulator transition in correlated electron systems, where electron states transform from itinerant to localized, has been one of the central themes of condensed matter physics for more than half a century. The persistence of this…
The crossover between a metal and a Mott insulator leads to a localization of fermions from delocalized Bloch states to localized states. We experimentally study this crossover using fermionic atoms in an optical lattice by measuring…
The Anderson localization transition is considered at finite temperatures. This includes the electrical conductivity as well as the electronic thermal conductivity and the thermoelectric coefficients. An interesting critical behavior of the…
In the presence of quenched disorder, the interplay between local magnetic-moment formation and Anderson localization for electrons at a zero-temperature, metal-insulator transition (MIT) remains a long unresolved problem. Here, we study…
Based on recent experiments, we describe the Mott insulating, but undimerized state of $TiOCl$ using the local-density approximation combined with multi-orbital dynamical mean field theory (LDA+DMFT) for this $3d^{1}$ system.Good agreement…
Ground state of the periodic Anderson model on a triangular lattice is systematically investigated by the mean-field approximation. We found that the model exhibits two different types of partially disordered states: one is at half filling…
Interacting fermions in the presence of disorder pose one of the most challenging problems in condensed matter physics, primarily due to the absence of accurate numerical tools. Our investigation delves into the intricate interplay between…
We discuss a recent mapping of the Anderson-Mott metal-insulator transition onto a random field magnet problem. The most important new idea introduced is to describe the metal-insulator transition in terms of an order parameter expansion…
We examine the localization properties of the Anderson Hamiltonian with additional off-diagonal disorder using the transfer-matrix method and finite-size scaling. We compute the localization lengths and study the metal-insulator transition…
We use a random gap model to describe a metal-insulator transition in three-dimensional semiconductors due to doping and find a conventional phase transition, where the effective scattering rate is the order parameter. Spontaneous symmetry…
We extend to the two-particle Anderson model the characterization of the metal-insulator transport transition obtained in the one-particle setting by Germinet and Klein. We show that, for any fixed number of particles, the slow spreading of…