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Enhancing the switching speed of oxide-based memristive devices at a low voltage level is crucial for their use as non-volatile memory and their integration into emerging computing paradigms such as neuromorphic computing. Efforts to…

The memristance of a memristor depends on the amount of charge flowing through it and when current stops flowing through it, it remembers the state. Thus, memristors are extremely suited for implementation of memory units. Memristors find…

Neural and Evolutionary Computing · Computer Science 2022-10-28 Udit Kumar Agarwal , Shikhar Makhija , Varun Tripathi , Kunwar Singh

Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance equation containing a state variable that imparts a memory effect. The current-voltage cycling causes…

Applied Physics · Physics 2024-09-17 Agustin Bou , Cedric Gonzales , Pablo P. Boix , Antonio Guerrero , Juan Bisquert

We extend the notion of memristive systems to capacitive and inductive elements, namely capacitors and inductors whose properties depend on the state and history of the system. All these elements show pinched hysteretic loops in the two…

Mesoscale and Nanoscale Physics · Physics 2009-11-21 Massimiliano Di Ventra , Yuriy V. Pershin , Leon O. Chua

Memristors are among the most promising elements for modern microelectronics, having unique properties such as quasi-continuous change of conductance and long-term storage of resistive states. However, identifying the physical mechanisms of…

Mesoscale and Nanoscale Physics · Physics 2022-05-25 Oleg G. Kharlanov , Boris S. Shvetsov , Vladimir V. Rylkov , Anton A. Minnekhanov

While two-terminal HfOX (x<2) memristor devices have been studied for ion transport and current evolution, there have been limited reports on the effect of the long-range thermal environment on their performance. In this work,…

Titanium dioxide (TiO2) memristors exhibit complex conduction mechanism. Several models of different complexity have been developed in order to mimic the experimental results for physical behaviors observed in memristor devices. Pickett's…

Emerging Technologies · Computer Science 2016-05-20 Ahmad Daoud , Ahmed Dessouki , Sherif Abuelenin

Memristors are prominent passive circuit elements with promising futures for energy-efficient in-memory processing and revolutionary neuromorphic computation. State-of-the-art memristors based on two-dimensional (2D) materials exhibit…

Computational Physics · Physics 2023-03-14 Samuel Aldana , Jakub Jadwiszczak , Hongzhou Zhang

In 1976, Leon Chua showed that a thermistor can be modeled as a memristive device. Starting from this statement we designed a circuit that has four circuit elements: a linear passive inductor, a linear passive capacitor, a nonlinear…

Redox-based nanoionic resistive memory cells (ReRAMs) are one of the most promising emerging nano-devices for future information technology with applications for memory, logic and neuromorphic computing. Recently, the serendipitous…

Transition-metal oxide films, demonstrating the effects of both threshold and nonvolatile memory resistive switching, have been recently proposed as candidate materials for storage-class memory. In this work we describe some experimental…

We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 {\mu}W) and energy (<200 fJ/bit/{\mu}m2), low read-power (~nW), and high endurance (>millions of cycles). To understand their…

Memristors have emerged as key candidates for beyond-von-Neumann neuromorphic or in-memory computing owing to the feasibility of their ultrahigh-density three-dimensional integration and their ultralow energy consumption. A memristor is…

Materials Science · Physics 2021-08-06 Lingxiang Hu , Jing Yang , Jingrui Wang , Peihong Cheng , Leon O. Chua , Fei Zhuge

This paper describes a new memristor crossbar architecture that is proposed for use in a high density cache design. This design has less than 10% of the write energy consumption than a simple memristor crossbar. Also, it has up to 4 times…

Hardware Architecture · Computer Science 2013-04-10 Chris Yakopcic , Tarek M. Taha

We report on resistive switching of memristive electrochemical metallization devices using 3D kinetic Monte Carlo simulations describing the transport of ions through a solid state electrolyte of an Ag/TiO$_{\text{x}}$/Pt thin layer system.…

Materials Science · Physics 2017-06-06 Sven Dirkmann , Thomas Mussenbrock

Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two terminal device…

Mesoscale and Nanoscale Physics · Physics 2015-04-08 V. K. Sangwan , D. Jariwala , I. S. Kim , K. -S. Chen , T. J. Marks , L. J. Lauhon , M. C. Hersam

We suggest an approach to use memristors (resistors with memory) in programmable analog circuits. Our idea consists in a circuit design in which low voltages are applied to memristors during their operation as analog circuit elements and…

Instrumentation and Detectors · Physics 2014-11-20 Yuriy V. Pershin , Massimiliano Di Ventra

In recent times, neural networks have been gaining increasing importance in fields such as pattern recognition and computer vision. However, their usage entails significant energy and hardware costs, limiting the domains in which this…

A memristor, a two-terminal nanodevice, has garnered substantial attention in recent years due to its distinctive properties and versatile applications. These nanoscale components, characterized by their simplicity of manufacture,…

Applied Physics · Physics 2025-02-20 Nikolaos Vasileiadis , Georgios Ch Sirakoulis , Panagiotis Dimitrakis

We suggest a possible realization of a solid-state memory capacitive (memcapacitive) system. Our approach relies on the slow polarization rate of a medium between plates of a regular capacitor. To achieve this goal, we consider a…

Mesoscale and Nanoscale Physics · Physics 2019-05-07 J. Martinez , M. Di Ventra , Yu. V. Pershin