Related papers: Landau Level Collapse in Gated Graphene Structures
In this note we consider a Landau Hamiltonian perturbed by a random magnetic potential of Anderson type. For a given number of bands, we prove the existence of both strongly localized states at the edges of the spectrum and dynamical…
In this note we prove the existence of a localization/delocalization transition for Landau Hamiltonians randomly perturbed by an electric potential with unbounded amplitude. In particular, with probability one, no Landau gaps survive as the…
An experimental study of Landau levels (LLs) in a system of two-dimensional massless Dirac fermions based on a critical thickness HgTe quantum well has been carried out. The magnetotransport and the capacitive response have been…
Effect of dc electric field on transport of highly mobile 2D electrons is studied in wide GaAs single quantum wells placed in titled magnetic fields. The study shows that in perpendicular magnetic field resistance oscillates due to electric…
We have studied Shubnikov-de Haas oscillations in a two-dimensional electron system in silicon at low electron densities. Near the metal-insulator transition, only "spin" minima of the resistance at Landau-level filling factors 2, 6, 10,…
We examined the magneto-transport behavior of electrons confined at the conducting LaAlO3/SrTiO3 interface in the low sheet carrier density regime. We observed well resolved Shubnikov-de Haas quantum oscillations in the longitudinal…
We report on transport measurements of dual-gated, single-layer graphene devices in the quantum Hall regime, allowing for independent control of the filling factors in adjoining regions. Progress in device quality allows us to study…
We study the magnetotransport properties of a two-dimensional electronic system with unconventional Rashba spin-orbit coupling in which the system is described by a pair of chiral spin texture in each spin branch, and the chirality is…
We present high field magneto-transport data from a range of 30nm wide InSb/InAlSb quantum wells. The low temperature carrier mobility of the samples studied ranged from 18.4 to 39.5 m2V-1s-1 with carrier densities between 1.5x1015 and…
At high magnetic fields and low temperatures, numerous extreme type-II superconductors exhibit Landau quantization of electronic motion. We present an analytic construction of the quasiparticle spectrum in this regime, based on the…
We study two dimensional electron systems confined in wide quantum wells whose subband separation is comparable with the Zeeman energy. Two N = 0 Landau levels from different subbands and with opposite spins are pinned in energy when they…
Half-filled Landau levels host an emergent Fermi-liquid which displays an instability towards pairing, culminating in a gapped even-denominator fractional quantum Hall ground state. While this pairing may be probed by tuning the…
We study the ground state of a clean two-dimensional electron liquid in a weak magnetic field where $N \gg 1$ lower Landau levels are completely filled and the upper level is partially filled. It is shown that the electrons at the upper…
We report an anti-levitation behavior of Landau levels in vanishing magnetic fields in a high quality hetero-junction insulated-gated field-effect transistor. We found, in the Landau fan diagram of electron density versus magnetic field,…
A single model is presented which represents both of the two apparently unrelated localisation problems of the title. The phase diagram of this model is examined using scaling ideas and numerical simulations. It is argued that the…
A momentum balance equation is developed to investigate the magnetotransport properties in monolayer molybdenum disulphide when a strong perpendicular magnetic field and a weak in-plane electric field are applied simultaneously. At low…
In the absence of disorder, the degeneracy of a Landau level (LL) is $N=BA/\phi_0$, where $B$ is the magnetic field, $A$ is the area of the sample and $\phi_0=h/e$ is the magnetic flux quantum. With disorder, localized states appear at the…
Unconventional magneto-transport fingerprints in the quantum Hall regime (with applied magnetic field from one to several tens of Tesla) in chemically functionalized graphene are reported. Upon chemical adsorption of monoatomic oxygen (from…
In inhomogeneously strained graphene, low-energy electrons experience a valley-antisymmetric pseudo-magnetic field which leads to the formation of localized states at the edge between the valence and conduction bands, understood in terms of…
We report the observation of an isolated charged impurity in graphene and present direct evidence of the close connection between the screening properties of a 2D electron system and the influence of the impurity on its electronic…