Related papers: Temperature dependence of spin depolarization of d…
We investigate spin transport in quasi 2DEG formed by III-V semiconductor heterojunctions using the Monte Carlo method. The results obtained with and without electron-electron scattering are compared and appreciable difference between the…
The electron spin dynamics in an optically excited narrow quantum well is studied, where the electron spins precess in a k-dependent magnetic field while the electrons scatter at localized impurities. For the resulting spin decay, which is…
A formula for the electron spin relaxation rate of an electron-phonon system is derived using a new spring-loop diagram method. The result contains the distribution functions for the electrons and phonons properly. Therefore, all the spin…
We simulate spin polarized transport of electrons along a silicon nanowire and along a silicon two dimensional channel. Spin density matrix calculations are used along with the semi-classical Monte Carlo approach to model spin evolution…
We perform an investigation on the spin relaxation for $n$-type ZnO (0001) quantum wells by numerically solving the kinetic spin Bloch equations with all the relevant scattering explicitly included. We show the temperature and electron…
The D'yakonov-Perel' (DP) spin-relaxation mechanism has traditionally been associated with either relativistic spin-orbit coupling, which breaks space-inversion symmetry, or inhomogeneous magnetization, which breaks both time-reversal and…
We present a complete description of spin injection and detection in Fe/Al_xGa_{1-x}As/GaAs heterostructures for temperatures from 2 to 295 K. Measurements of the steady-state spin polarization in the semiconductor indicate three…
Electron spin relaxation in bulk III-V semiconductors is investigated from a fully microscopic kinetic spin Bloch equation approach where all relevant scatterings, such as, the electron--nonmagnetic-impurity, electron-phonon,…
A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin…
At low temperatures, electrons in semiconductors are bound to shallow donor impurity ions, neutralizing their charge in equilibrium. Inelastic scattering of other externally-injected conduction electrons accelerated by electric fields can…
Zinc oxide is a wide-bandgap semiconductor which is considered a potential candidate for fabricating next-generation transparent spintronic devices. However, before this can be practically achieved, a thorough, scientific understanding of…
We comment on the conclusion by Teng et al. [J. Phys. D: Appl. Phys. {\bf 42}, 135111 (2009)] that the Bir-Aronov-Pikus mechanism is more important than the D'yakonov-Perel' mechanism at high carrier density in intrinsic bulk GaAs. We point…
Spintronic devices usually rely on long spin relaxation times and/or lengths for optimum performance. Therefore, the ability to modulate these quantities with an external agent offers unique possibilities. The dominant spin relaxation…
The temperature dependence of the electron spin $g$ factor in GaAs is investigated experimentally and theoretically. Experimentally, the $g$ factor was measured using time-resolved Faraday rotation due to Larmor precession of electron spins…
The mechanisms that determine spin relaxation times of localized electrons in impurity bands of n-type semiconductors are considered theoretically and compared with available experimental data. The relaxation time of the non-equilibrium…
An electric current flowing in a ferromagnetic metal carries spin angular momentum, i.e. it is spin-polarized. Here, we measure the spin-wave Doppler shift induced by the transfer of angular momentum from the diffusive spin-polarized…
We combine extensive precision measurements of the optically detected spin dynamics and magneto-transport measurements in a contiguous set of n-doped bulk GaAs structures in order to unambiguously unravel the intriguing but complex…
We study the in-plane transport of spin-polarized electrons in III-V semiconductor quantum wells. The spin dynamics is controlled by the spin-orbit interaction, which arises via the Dresselhaus (bulk asymmetry) and Rashba (well asymmetry)…
The spin degree of freedom in solids offers opportunities beyond charge-based electronics and is actively investigated for both spintronics and quantum computation. However, the interplay of these spins with their native environment can…
We present a microscopic analysis of electron spin dynamics in the presence of an external magnetic field for non-centrosymmetric semiconductors in which the D'yakonov-Perel' spin-orbit interaction is the dominant spin relaxation mechanism.…