Related papers: Temperature dependence of spin diffusion length in…
We use electrical spin injection to probe exchange interactions in phosphorus doped silicon (Si:P). The detection is enabled by a magnetoresistance effect that demonstrates the efficiency of exchange in imprinting spin information from the…
The spin-transfer torque from a DC spin-polarized current can generate highly-coherent magnetic precession in nanoscale magnetic-multilayer devices. By measuring linewidths of spectra from the resulting resistance oscillations, we argue…
The temperature dependence of dark conductivity at low temperatures (300-15 K) was studied on a wide microstructural range of well-characterized highly crystallized single phase undoped microcrystalline silicon samples. Our study reveals…
Since the discovery of the giant magnetoresistance (GMR) effect the use of the intrinsic angular momentum of the electrons has opened up new spin based device concepts. The two channel model of spin-up and spin-down electrons with…
We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue…
We measure the spin-lattice relaxation of donor bound electrons in ultrapure, isotopically enriched, phosphorus-doped $^{28}$Si:P. The optical pump-probe experiments reveal at low temperatures extremely long spin relaxation times which…
Non-diffusive thermal transport has gained extensive research interest recently due to its important implications on fundamental understanding of material phonon mean free path distributions and many nanoscale energy applications. In this…
We study spin polarized transport in silicon germanium nanowires using a semiclassical monte carlo approach. Spin depolarization in the channel is caused due to D'yakonov-Perel (DP) relaxation associated with Rashba spin orbit coupling and…
Implementing spin functionalities in Si, and understanding the fundamental processes of spin injection and detection, are the main challenges in spintronics. Here we demonstrate large spin polarizations at room temperature, 34% in n-type…
We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si…
Spin-polarized scanning tunneling microscopy investigations reveal a significant increase of the magnetic period of spin spirals in three-atomic-layer-thick Fe films on Ir(111), from about 4nm at 8K to about 65nm at room temperature. We…
We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free…
The contributions to the spin relaxation in copper (Cu) nanowires are quantified by carefully analyzing measurements of both charge and spin transport in lateral spin valves as a function of temperature and thickness. The temperature…
The "textbook" phonon mean free path (MFP) of heat carrying phonons in silicon at room temperature is ~40 nm. However, a large contribution to the thermal conductivity comes from low-frequency phonons with much longer MFPs. We present a…
The Landau-Lifshitz-Gilbert damping parameter is typically assumed to be a local quantity, independent of magnetic configuration. To test the validity of this assumption we calculate the precession damping rate of small amplitude…
We explore the temperature-dependent plasmonic modes of an n-doped double-layer silicene system which is composed of two spatially separated single layers of silicene with a distance large enough to prevent the interlayer electron…
We investigate spin precession (Hanle effect) in the prototypical organic spintronic giant magnetoresistance (GMR) device La0.7Sr0.3MnO3(LSMO)/tris(8-hydroxyquinoline)(Alq3)/AlOx/Co. The Hanle effect is not observed in measurements taken by…
The fundamental aspects of spin-dependent transport processes and their interplay with temperature gradients, as given by the spin Seebeck coefficient, are still largely unexplored and a multitude of contributing factors must be considered.…
The spin susceptibility of noncentrosymmetric superconductors is studied when the gap function has line nodes. As examples, d-wave states, where the gap function has an additional odd-parity phase factor, are examined. The curve of the spin…
We performed measurements of Py/Cu and Py/Ag lateral spin valves as function of injection current direction and magnitude. Above a 'critical' current, there is an unexpected dependence of spin injection on current direction. Positive…