Related papers: Temperature dependence of spin diffusion length in…
Hyperpolarized nanoparticles (NPs) offer high polarization levels with room temperature relaxation times exceeding half an hour. In this work, we demonstrate that the achievable hyperpolarization enhancement and relaxation (decay) time at…
The Hanle effect describes suppression of spin polarization due to precession in a magnetic field. This is a standard spintronics tool and it gives access to the spin lifetime of samples in which spins are generated homogeneously. We…
Graphene is a promising substrate for future spintronics devices owing to its remarkable electronic mobility and low spin-orbit coupling. Hanle precession in spin valve devices is commonly used to evaluate the spin diffusion and spin…
A distinguishing feature of spin accumulation in ferromagnet-semiconductor devices is precession of the non-equilibrium spin population of the semiconductor in a magnetic field. This is the basis for detection techniques such as the Hanle…
The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states has led to the observation of new electronic transport phenomena such as anomalously quantized…
Zinc oxide is a wide-bandgap semiconductor which is considered a potential candidate for fabricating next-generation transparent spintronic devices. However, before this can be practically achieved, a thorough, scientific understanding of…
The current generation of spintronic devices, which use electron-spin relies on linear operations for spin-injection, transport and detection processes. The existence of nonlinearity in a spintronic device is indispensable for spin-based…
We study spin transport through a suspended Cu channel by an electrical non-local 4-terminal measurement for future spin mechanics applications. A magnetoresistance due to spin transport through the suspended Cu channel is observed, and its…
We demonstrate the injection and detection of electrically and thermally generated spin currents probed in Co$_2$MnSi/Cu lateral spin valves. Devices with different electrode separations are patterned to measure the non-local signal as a…
We investigate the behavior of both pure spin and spin-polarized currents measured with four probe non-local and two probe local configurations up to room temperature and under external gate voltage in a lateral graphene transistor,…
We inject spin-polarized electrons from an Fe/MgO tunnel barrier contact into n-type Ge(001) substrates with electron densities 2e16 < n < 8e17 cm-3, and electrically detect the resulting spin accumulation using three-terminal Hanle…
Electrical spin injection and transport in silicon are central challenges for realizing semiconductor-based spintronic devices, particularly in p-type Si, where strong spin relaxation and interface effects often suppress detectable spin…
We report on a theoretical study of spin dynamics of an ensemble of spin-polarized electrons injected in a diffusive microchannel with linear Rashba and Dresselhaus spin-orbit coupling. We explore the dependence of the spin-precession and…
Spin transport in non-degenerate semiconductors is expected to pave a way to the creation of spin transistors, spin logic devices and reconfigurable logic circuits, because room temperature (RT) spin transport in Si has already been…
We propose a possible experimental setup for nonreciprocal electron transport in a lateral spin valve due to noncoplanar distribution of magnetic moment (and field) in the system. Some metals (Al, Cu) and semiconductors (GaAs, InSb etc.)…
Spin precession experiments in lateral spin devices are a powerful tool for probing the spin transport properties of materials. These experiments can be quantitatively described using the Bloch diffusion equation, which offers a practical…
Valley-spin coupling in transition-metal dichalcogenides (TMDs) can result in unusual spin transport behaviors under an external magnetic field. Nonlocal resistance measured from 2D materials such as TMDs via electrical Hanle experiments…
Injection, transmission, and detection of spins in a conducting channel are the basic ingredients of spintronic devices. Long spin lifetimes during transit are an important ingredient in realizing this technology. An attractive platform for…
A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…
We have fabricated a multi terminal lateral mesoscopic metallic spin valve demonstrating spin precession at room temperature, using tunnel barriers in combination with metallic ferromagnetic electrodes as spin injector and detector. The…