Related papers: Spin relaxation: From 2D to 1D
The Dyakonov-Perel (DP) mechanism of spin relaxation has long been considered irrelevant in centrosymmetric systems since it was developed originally for non-centrosymmetric ones. We investigate whether this conventional understanding…
Spin relaxation in the impurity band of a 2D semiconductor with spin-split spectrum in the external magnetic field is considered. Several mechanisms of spin relaxation are shown to be relevant. The first one is attributed to phonon-assisted…
Theory of the electron spin relaxation in graphene on the SiO$_2$ substrate is developed. Charged impurities and polar optical surface phonons in the substrate induce an effective random Bychkov-Rashba-like spin-orbit coupling field which…
Relaxation of conduction electron spins in a semiconductor owing to the hyperfine interaction with spin-1/2 nuclei, in zero applied magnetic field, is investigated. We calculate the electron spin relaxation time scales, in order to evaluate…
Prospect of building electronic devices in which electron spins store and transport information has revived interest in the spin relaxation of conduction electrons. Since spin-polarized currents cannot flow indefinitely, basic…
Spintronics is an emerging paradigm with the aim to replace conventional electronics by using electron spins as information carriers. Its utility relies on the magnitude of the spin-relaxation, which is dominated by spin- orbit coupling…
Ballistic spin resonance was experimentally observed in a quasi-one-dimensional wire by Frolov et al. [Nature (London) 458, 868 (2009)]. The spin resonance was generated by a combination of an external static magnetic field and the…
We study electron spin relaxation in one-dimensional structures of finite length in the presence of Bychkov-Rashba spin-orbit coupling and boundary spin relaxation. Using a spin kinetic equation approach, we formulate boundary conditions…
We present an analytical study of the D'yakonov-Perel' spin relaxation time for degenerate electrons in a photo-excited electron-hole liquid in intrinsic semiconductors exhibiting a spin-split band structure. The D'yakonov-Perel' spin…
Spintronic devices usually rely on long spin relaxation times and/or lengths for optimum performance. Therefore, the ability to modulate these quantities with an external agent offers unique possibilities. The dominant spin relaxation…
Intrinsic electron spin relaxation due to the D'yakonov-Perel' mechanism is studied in monolayer Molybdenum Disulphide. An intervalley in-plane spin relaxation channel is revealed due to the opposite effective magnetic fields perpendicular…
We present a microscopic analysis of electron spin dynamics in the presence of an external magnetic field for non-centrosymmetric semiconductors in which the D'yakonov-Perel' spin-orbit interaction is the dominant spin relaxation mechanism.…
The longitudinal spin relaxation time, T1, in a Si/SiGe quantum well is determined from the saturation of the ESR signal. We find values of a few microseconds. Investigations of T1 as a function of Fermi energy, concentration of scattering…
We study the spatial decay of spin polarized hot carrier current in a spin-valve structure consisting of a semiconductor quantum wire flanked by half-metallic ferromagnetic contacts. The current decays because of D'yakonov-Perel' spin…
Spin-relaxation is conventionally discussed using two different approaches for materials with and without inversion symmetry. The former is known as the Elliott-Yafet (EY) theory and for the latter the D'yakonov-Perel' (DP) theory applies,…
The D'yakonov-Perel' mechanism, intimately related to the spin splitting of the electronic states, usually dominates the spin relaxation in zinc blende semiconductor quantum structures. Previously it has been formulated for the two limiting…
The D'yakonov-Perel' spin relaxation mechanism in n-doped GaAs/AlGaAs quantum wells (QWs) has been studied both theoretically and experimentally. The temperature dependence of the spin relaxation time has been calculated for arbitrary…
Spin relaxation time of conduction electrons through the Elliot-Yafet, D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance of each…
We study spin relaxation in dilute magnetic semiconductors near a ferromagnetic transition, where spin fluctuations become strong. An enhancement in the scattering rate of itinerant carriers from the spin fluctuations of localized…
Silicon is a leading candidate material for spin-based devices, and two-dimensional electron gases (2DEGs) formed in silicon heterostructures have been proposed for both spin transport and quantum dot quantum computing applications. The key…