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The ideal photon-pair source for building up multi-qubit states needs to produce indistinguishable photons with high efficiency. Indistinguishability is crucial for minimising errors in two-photon interference, central to building larger…
Light sources with ultra-low energy consumption and high performance are required to realize optical interconnects for on-chip communication. Photonic crystal (PhC) nanocavity lasers are one of the most promising candidates to fill this…
We demonstrate saturated internal detection efficiency at 1550 nm wavelengths for meander-shaped superconducting nanowire single-photon detectors made of 3 nm thick MoSi films with widths of 1 and 3 ${\mu}m$, and active areas up to 400 by…
Light trapping in sub-wavelength semiconductor nanowires (NWs) offers a promising approach to simultaneously reducing material consumption and enhancing photovoltaic performance. Nevertheless, the absorption efficiency of a NW, defined by…
Superconducting nanowire single-photon detectors promise efficient (~100%) and fast (~Gcps) detection of light at the single-photon level. They constitute one of the building blocks to realize integrated quantum optical circuits in a…
We investigate the relaxation dynamics of photogenerated carriers in silicon nanowires consisting of a crystalline core and a surrounding amorphous shell, using femtosecond time-resolved differential reflectivity and transmission…
The primary challenge in silicon photonics is achieving efficient luminescence in the communication band, crucial for its large-scale application. Despite significant efforts, silicon light sources still suffer from low efficiency and…
Current optical communication system operating at 1.55 {\mu}m wavelength band may not be able to continually satisfy the growing demand on the data capacity within the next few years. Opening a new spectral window at around 2 {\mu}m…
It was investigated the possibility of creating NbN superconducting single-photon detectors with saturated dependence of quantum efficiency versus normalized bias current. It was shown that the saturation increases for the detectors based…
Time- and number-resolved photon detection is crucial for photonic quantum information processing. Existing photon-number-resolving (PNR) detectors usually have limited timing and dark-count performance or require complex fabrication and…
Advances in quantum photonics have shown that chip-scale quantum devices are translating from the realm of basic research to applied technologies. Recent developments in integrated photonic circuits and single photon detectors indicate that…
Using Ensemble Monte Carlo simulations the photocurrent in a 500nm long strained [110] silicon nanowire with diameter of 3.1 nm is investigated. It was observed that a phototransistor based on this nanowire can have responsivities in the…
High efficiency single photon detection is an interesting problem for many areas of physics, including low temperature measurement, quantum information science and particle physics. For optical photons, there are many examples of devices…
While advancing a physics-based comprehensive photodetector-simulation model, we propose a novel device design of the mid-wavelength infrared nBn photodetectors by exploiting the inherit flexibility of the $InAs_{1-x}Sb_{x}$ ternary alloy…
In this work, we investigate the optoelectronic properties of zinc oxide (ZnO) nanowires, which are good candidates for applications based on integrated optics. Single ZnO nanowire photodetectors were fabricated with ohmic contacts. By…
Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic…
An effective harmonic potential for photons is achieved in a photonic crystal structure, owing to the balance of the background dispersion and a bichromatic potential. Consequently, ultra-compact resonators with several equi-spaced…
A negative kink in excess conductivity is observed in p-type non-degenerate (moderate dopant concentration) silicon wafers when excited by a very narrow pulse of 532 nm laser appearing just after the complete positive decay of dark…
We demonstrate superconducting nanowire single photon detectors with 76 +/- 4 % system detection efficiency at a wavelength of 315 nm and an operating temperature of 3.2 K, with a background count rate below 1 count per second at saturated…
We report on the conversion to telecom wavelength of single photons emitted by a nitrogen-vacancy (NV) defect in diamond. By means of difference frequency generation, we convert spin-selective photons at 637 nm, associated with the coherent…