Related papers: Epitaxial Graphenes on Silicon Carbide
We present a technique to tune the charge density of epitaxial graphene via an electrostatic gate that is buried in the silicon carbide substrate. The result is a device in which graphene remains accessible for further manipulation or…
Graphene exhibits unconventional two-dimensional electronic properties resulting from the symmetry of its quasiparticles, which leads to the concepts of pseudospin and electronic chirality. Here we report that scanning tunneling microscopy…
Silicon carbide (SiC) is an excellent substrate for growth and manipulation of large scale, high quality epitaxial graphene. On the carbon face (the ($\bar{1}\bar{1}\bar{1}$) or $(000\bar{1}$) face, depending on the polytype), the onset of…
The electronic band structure of as-grown and doped graphene grown on the carbon face of SiC is studied by high-resolution angle-resolved photoemission spectroscopy, where we observe both rotations between adjacent layers and AB-stacking.…
We investigate the growth of the graphene buffer layer and the involved step bunching behavior of the silicon carbide substrate surface using atomic force microscopy. The formation of local buffer layer domains are identified to be the…
One of the ways to use graphene in field effect transistors is to introduce a band gap by quantum confinement effect [1]. That is why narrow graphene nanoribbons (GNRs) with width less than 50nm are considered to be essential components in…
To take full advantage of twisted bilayers of graphene or other two-dimensional materials, it is essential to precisely control the twist angle between the stacked layers, as this parameter determines the properties of the heterostructure.…
We show using scanning tunneling microscopy, spectroscopy, and ab initio calculations that several intercalation structures exist for Na in epitaxial graphene on SiC(0001). Intercalation takes place at room temperature and Na electron-dopes…
Graphene on silicon carbide (SiC) bears great potential for future graphene electronic applications because it is available on the wafer-scale and its properties can be custom-tailored by inserting various atoms into the graphene/SiC…
Grain boundaries in epitaxial graphene on the SiC(000$\bar{1}$) substrate are studied using scanning tunneling microscopy and spectroscopy. All investigated small-angle grain boundaries show pronounced out-of-plane buckling induced by the…
We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch exceeds $20\%$. High-resolution transmission electron…
Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged with Nomarski interference contrast and atomic force…
Despite the large literature focused on the growth of graphene (Gr) on 6H-SiC(0001) by chemical vapour deposition (CVD), some important issues have not been solved and full wafer scale epitaxy of Gr remains challenging, hampering…
Graphene, a flat monolayer of carbon atoms tightly packed into a two-dimensional honeycomb lattice (a one atom thick graphite sheet), is presently the hottest material in nanoscience and nanotechnology. Its challenging hypothetical…
We present a minimal but crucial microscopic theory for epitaxial graphene and graphene nanoribbons on the 4H-SiC(0001) surface -- protopypical materials to explore physical properties of graphene in large scale. Coarse-grained model…
We report results from two-dimensional Raman spectroscopy studies of large-area epitaxial graphene grown on SiC. Our work reveals unexpectedly large variation in Raman peak position across the sample resulting from inhomogeneity in the…
High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gate length of 240 nm. The high-frequency performance of these…
Realization of post-CMOS graphene electronics requires production of semiconducting graphene, which has been a labor-intensive process. We present tailoring of silicon carbide crystals via conventional photolithography and microelectronics…
The evolution in the surface morphology of epitaxial graphene films and 6H-SiC(0001) substrates is studied by electron channeling contrast imaging. Whereas film thickness is determined by growth temperature only, increasing growth times at…
Recent experiments shown that graphene epitaxially grown on Silicon Carbide (SiC) can exhibit a energy gap of 0.26 eV, making it a promising material for electronics. With an accurate model, we explore the design parameter space for a fully…