Related papers: Microchannel avalanche photodiode with wide linear…
InGaAs/InP-based semiconductor avalanche photodiode are usually employed for single-photon counting at telecom wavelength. However they are affected by afterpulsing which limits the diode performance. Recently, Princeton Lightwave has…
Photonic quantum technologies promise a revolution of the world of information processing, from simulation and computing to communication and sensing, thanks to the many advantages of exploiting single photons as quantum information…
The characteristic properties of two-phase Ar avalanche detectors, including those obtained with CsI photocathode, are further studied. Such detectors are relevant in the field of coherent neutrino-nucleus scattering and dark matter search…
Integrated quantum photonics, which allows for the development and implementation of chip-scale devices, is recognized as a key enabling technology on the road towards scalable quantum networking schemes. However, many state-of-the-art…
The search for light dark matter and cosmic primordial neutrinos necessitates detectors with sub-millielectronvolt (sub-meV) energy thresholds. While superconducting quantum sensors have approached this sensitivity, they often face…
A photon detector combining the two avalanche photon diodes (APD) has been demonstrated for qubit discrimination in 1550 nm. Spikes accompanied with the signals in gated-mode were canceled by balanced output from the two APDs. The spike…
Afterpulsing is one of the main technological flaws present in photon counting detectors based on solid-state semiconductor avalanche photodiodes operated in Geiger mode. Level of afterpulsing depends mainly on type of the semiconductor,…
Infrared avalanche photodiode arrays represent a panacea for many branches of astronomy by enabling extremely low-noise, high-speed and even photon-counting measurements at near-infrared wavelengths. We recently demonstrated the use of an…
Silicon single-photon detectors (SPDs) are key devices for detecting single photons in the visible wavelength range. Photon detection efficiency (PDE) is one of the most important parameters of silicon SPDs, and increasing PDE is highly…
We describe a novel gaseous detector concept for heavy-ion tracking and imaging: the Optical Parallel-Plate Avalanche Counter (O-PPAC). The detector consists of two thin parallel-plate electrodes separated by a small (typically 3 mm) gap…
4H-SiC low gain avalanche detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO$_2$ passivation layer. The I-V and C-V characteristics of the 4H-SiC…
Capacitive-coupled Low-Gain Avalanche Diode (AC-LGAD) sensors are being developed for high-energy particle physics experiments as a detector which provides fast time information with fine spatial resolution. This paper describes…
In MicroPattern Gas Detectors (MPGD) when the pixel size is below 100 micron and the number of pixels is large (above 1000) it is virtually impossible to use the conventional PCB read-out approach to bring the signal charge from the…
Free space optical communication systems with extremely high detector sensitivities are attractive for various applications with low size, weight and power requirements. For these practical systems, integrated hardware elements with small…
In this paper we present a general method for estimating rates of accidental coincidence between a pair of single photon detectors operated within their saturation regimes. By folding the effects of recovery time of both detectors and the…
Active 3D imaging systems have broad applications across disciplines, including biological imaging, remote sensing and robotics. Applications in these domains require fast acquisition times, high timing resolution, and high detection…
We present an analog silicon photomultiplier (SiPM) based on a standard 55 nm Bipolar-CMOS-DMOS (BCD) technology. The SiPM is composed of 16$\times$16 single-photon avalanche diodes (SPADs) and measures 0.29$\times$0.32 mm$^2$. Each SPAD…
Few-layer molybdenum disulfide (FL-MoS$_2$) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top…
The Argonne micro-channel plate photomultiplier tube (MCP-PMT) is an offshoot of the Large Area Pico-second Photo Detector (LAPPD) project, wherein \mbox{6 $\times$ 6 cm$^2$} sized detectors are made at Argonne National Laboratory.…
The performance of an electroluminescence (EL) Time Projection Chamber (TPC) with a multi avalanche photodiode (APD) readout was studied in pure xenon at 3.8 bar. Intercalibration and reconstruction methods were developed and applied to the…