Related papers: Phase change memory technology
Resistance switching memory cells such as electrochemical metallization cells and valence change mechanism cells have the potential to revolutionize information processing and storage. However, the creation of deterministic resistance…
Chalcogenide phase-change materials (PCMs) are regarded as the leading candidate for storage-class non-volatile memory and neuro-inspired computing. Recently, using the $TiTe_2$/$Sb_2Te_3$ material combination, a new framework -…
In recent years, there is an increasing demand of big memory systems so to perform large scale data analytics. Since DRAM memories are expensive, some researchers are suggesting to use other memory systems such as non-volatile memory (NVM)…
Quantum memory is a central component for quantum information processing devices, and will be required to provide high-fidelity storage of arbitrary states, long storage times and small access latencies. Despite growing interest in applying…
Over the past two decades, the storage capacity and access bandwidth of main memory have improved tremendously, by 128x and 20x, respectively. These improvements are mainly due to the continuous technology scaling of DRAM (dynamic…
An optical equivalent of the field-programmable gate array (FPGA) is of great interest to large-scale photonic integrated circuits. Previous programmable photonic devices relying on the weak, volatile thermo-optic or electro-optic effect…
Fast and reversible phase transitions in chalcogenide phase-change materials (PCMs), in particular, Ge-Sb-Te compounds, are not only of fundamental interests, but also make PCMs based random access memory (PRAM) a leading candidate for…
Phase-change material (PCM)-based non-volatile multilevel phase shifters are key components in photonic integrated circuits. Electrically, multiple phase levels can be encoded by controlling the heater power and employing different…
Electrochemical random-access memory (ECRAM) is a recently developed and highly promising analog resistive memory element for in-memory computing. One longstanding challenge of ECRAM is attaining retention time beyond a few hours. This…
Active metasurfaces promise reconfigurable optics with drastically improved compactness, ruggedness, manufacturability, and functionality compared to their traditional bulk counterparts. Optical phase change materials (O-PCMs) offer an…
Memory has always been a building block element for information technology. Emerging technologies such as artificial intelligence, big data, the internet of things, etc., require a novel kind of memory technology that can be energy…
The current mobile applications have rapidly growing memory footprints, posing a great challenge for memory system design. Insufficient DRAM main memory will incur frequent data swaps between memory and storage, a process that hurts…
Phase change materials (PCMs) are well-known for their reversible and rapid switching between crystalline and amorphous phases through thermal excitations mediated by strong electrical or laser pulses. This crystal-to-amorphous transition…
This paper proposes a computationally efficient simulation strategy for cold thermal energy storage (TES) systems based on phase change material (PCM). Taking as a starting point the recent design of a TES system based on PCM, designed to…
In today's data-centric world, where data fuels numerous application domains, with machine learning at the forefront, handling the enormous volume of data efficiently in terms of time and energy presents a formidable challenge. Conventional…
Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of…
The functionality of logic and memory elements in current electronics is based on multi-stability, driven either by manipulating local concentrations of electrons in transistors, or by switching between equivalent states of a material with…
Today's systems are overwhelmingly designed to move data to computation. This design choice goes directly against at least three key trends in systems that cause performance, scalability and energy bottlenecks: (1) data access from memory…
This paper discusses recent research that aims to enable computation close to data, an approach we broadly call processing-in-memory (PIM). PIM places computation mechanisms in or near where the data is stored (i.e., inside memory chips or…
Electronically reprogrammable photonic circuits based on phase-change chalcogenides present an avenue to resolve the von-Neumann bottleneck; however, implementation of such hybrid photonic-electronic processing has not achieved…