Related papers: GaMnAs-based magnetic tunnel junctions with an AlM…
We report measurements of the electron transport through atomic-scale constrictions and tunnel junctions between ferromagnetic electrodes. Structures are fabricated using a combination of e-beam lithography and controlled electromigration.…
Using first-principles calculations, we explore the role of an anti-ferromagnetic heavy-metal, L1$_0$-IrMn, as a capping layer in a perpendicular magnetic tunnel junction (\emph{p}-MTJ). A comparative study is conducted by employing…
Based on the non-equilibrium Green's function (NEGF) technique and the Landauer-B\"{u}ttiker theory, the possibility of a molecular spin-electronic device, which consists of a single C$_{60}$ molecule attached to two ferromagnetic…
As an unconventional magnet, altermagnetism attracts great interest in condensed matter physics and applies a new research platform for the spintronics. Since the tunneling magnetoresistance (TMR) effect is an important research aspect in…
We report a large tunneling anisotropic magnetoresistance (TAMR) in a thin (Ga,Mn)As epilayer with lateral nanoconstrictions. The observation establishes the generic nature of this effect, which originates from the spin-orbit coupling in a…
The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions are studied using first-principles calculations. For small MgO barrier thickness the minority-spin resonant bands at the two interfaces make…
Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the advantages of antiferromagnets producing no stray fields and exhibiting ultrafast magnetization dynamics. The efficient method to detect an AFM order…
The utilization of two-dimensional (2D) materials in magnetic tunnel junctions (MTJs) has shown excellent performance and rich physics. As for 2D antiferromagnets, the magnetic moments in different layers respond asynchronously and can be…
Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics, where an AFM N\'eel vector is used as a state variable. Efficient electric control and detection of the N\'eel vector are critical for spintronic applications.…
We study electronic transport through quantum dots weakly coupled to ferromagnetic leads with collinear magnetization directions. Tunneling contributions of first and second order in the tunnel-coupling strength are taken into account. We…
Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting performance and spintronic non-volatility could deliver…
Materials that demonstrate large magnetoresistance have attracted significant interest for many decades. Recently, extremely large tunnel magnetoresistance (TMR) has been reported by several groups across ultrathin CrI$_3$ by exploiting the…
The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling…
We propose the perspective of symmetry-selective resonance of the $\Delta_1$ states in the Fe/MgO/ZnO/MgO/Fe heterostructures, offering a broad landscape to design magnetic tunnel junctions (MTJs) that yield a towering tunnel…
The exceptional properties of two-dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean…
We theoretically investigate the angular and spin dependent transport in normal-metal/helical-multiferroic/ferromagnetic heterojunctions. We find a tunneling anisotropic magnetoresistance (TAMR) effect due to the spiral magnetic order in…
The influence of insertion of an ultra-thin NiO layer between the MgO barrier and ferromagnetic electrode in magnetic tunnel junctions has been investigated by measuring the tunneling magnetoresistance and the X-ray magnetic circular…
We have experimentally and theoretically investigated the spin transport in Fe/Mg/MgO/MgAl2O4/n+-Si(001) ferromagnetic tunnel junctions on a Si substrate, by systematically varying the thickness combination of amorphous MgO and MgAl2O4…
We performed a first-principles study of the tunneling anisotropic magneto-resistance (TAMR) in Ag(Ir,Pt)$/$MgO$/$Fe junctions. Enhanced TAMR with ideal and skewed fourfold angular dependence is found in-plane and out-of-plane TAMR of the…
To study the impact of oxygen vacancies on spin-polarized transport, we have computed the electronic and transport properties of single (F centers) and paired (M centers) oxygen vacancies using density functional theory. These point defects…