Related papers: Dependence of quantum-Hall conductance on the edge…
Manipulating electron quantum 1D channels is an important element in the field of quantum information due to their ballistic and phase coherence properties. In GaAs and graphene based two dimensional gas systems, these edge channels have…
Measurement and theory of the two-terminal conductance of monolayer and bilayer graphene in the quantum Hall regime are compared. We examine features of conductance as a function of gate voltage that allow monolayer, bilayer, and gapped…
Recent experiments have shown that electronic Mach-Zehnder interferometers of unprecedented fidelities could be built using a graphene pn junction in the quantum Hall regime. In these junctions, two different edge states corresponding to…
An algorithm is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals,…
The Hall effect, and the diagonal resistance, which indicates a residual resistivity $\rho_{xx} \approx h/4e^{2}$, are experimentally examined over the p$\leftrightarrow$n transition about the nominal neutrality point in chemical vapor…
In this report we experimentally probe the non-equilibrium breakdown of the quantum Hall state in monolayer graphene by injecting a high current density ($\sim$1A/m). The measured critical currents for dissipationless transport in the…
The minimum of 4-terminal conductance occurring at its charge neutral point has proven to be a robust empirical feature of graphene, persisting with changes to temperature, applied magnetic field, substrate, and layer thickness, though the…
Recent quantum Hall experiments conducted on disordered graphene pn junction provide evidence that the junction resistance could be described by a simple Ohmic sum of the n and p mediums' resistances. However in the ballistic limit, theory…
Transport through edge-channels is responsible for conduction in quantum Hall (QH) phases. Topology dictates quantization of both charge and thermal transport coefficients. These turn out to approach robust quantized values when incoherent…
We numerically study the interplay of band structure, topological invariant and disorder effect in two-dimensional electron system of graphene in a magnetic field. Two \emph{distinct} quantum Hall effect (QHE) regimes exist in the energy…
We report on the observation of quantum transport and interference in a graphene device that is attached with a pair of split gates to form an electrostatically-defined quantum point contact (QPC). In the low magnetic field regime, the…
We investigate transport in a gate-defined graphene quantum point contact in the quantum Hall regime. Edge states confined to the interface of p and n regions in the graphene sheet are controllably brought together from opposite sides of…
We have investigated the disorder of epitaxial graphene close to the charge neutrality point (CNP) by various methods: i) at room temperature, by analyzing the dependence of the resistivity on the Hall coefficient ; ii) by fitting the…
Observations of electron-hole asymmetry in transport through graphene devices at high magnetic field challenge prevalent models of the graphene quantum Hall effect. Here, we study this asymmetry both in conventional magnetotransport and in…
We probe quantum Hall effect in a tunable 1-D lateral superlattice (SL) in graphene created using electrostatic gates. Lack of equilibration is observed along edge states formed by electrostatic gates inside the superlattice. We create…
Using high quality graphene pnp junctions, we observe prominent conductance fluctuations on transitions between quantum Hall (QH) plateaus as the top gate voltage Vtg is varied. In the Vtg-B plane, the fluctuations form crisscrossing lines…
We report distinctive magnetotransport properties of a graphene p-n-p junction prepared by controlled diffusion of metallic contacts. In most cases, materials deposited on a graphene surface introduce substantial carrier scattering, which…
The magneto- and Hall resistance of a locally gated cross shaped graphene Hall bar is calculated. The edge of the top gate is placed diagonally across the center of the Hall cross. Four-probe resistance is calculated using the…
Quantum spin Hall insulator/metal interfaces are formed in graphene ribbons with intrinsic spin-orbit coupling by selectively doping two regions creating a potential step. For a clean graphene ribbon, the transmission of the topological…
The quantum Hall effect is the seminal example of topological protection, as charge carriers are transmitted through one-dimensional edge channels where backscattering is prohibited. Graphene has made its marks as an exceptional platform to…