Related papers: NOR gate response in a double quantum ring: An exa…
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…
High-fidelity two-qubit entangling gates play an important role in many quantum information processing tasks and are a necessary building block for constructing a universal quantum computer. Such high-fidelity gates have been demonstrated…
An approach which allows to include the corrections from non-orthogonality of electron states in contacts and quantum dots is developed. Comparison of the energy levels and charge distributions of electrons in 1D quantum dot (QD) in…
We study the energy level structure of two-dimensional charged particles in inhomogeneous magnetic fields. In particular, for magnetic anti-dots the magnetic field is zero inside the dot and constant outside. Such a device can be fabricated…
We propose that a magnetic quantum wire composed of magnetic and non-magnetic atomic sites can be used as a spin filter for a wide range of applied bias voltage. We adopt a simple tight-binding Hamiltonian to describe the model where the…
We study the electron transport through a system of two low-capacitance metal islands connected in series between two electrodes. The work is motivated in part by experiments on semiconducting double-dots, which show intriguing effects…
A double quantum dot is formed in a graphene nanoribbon device using three top gates. These gates independently change the number of electrons on each dot and tune the inter-dot coupling. Transport through excited states is observed in the…
Quantum algorithms on near-term quantum processors are typically executed using shallow quantum circuits composed of one- and two-qubit gates. However, as circuit depth and gate number increase, gate imperfections and qubit decoherence…
Motivated by recent experiments of Zajac et al. [arXiv:1708.03530], we theoretically describe high-fidelity two-qubit gates using the exchange interaction between the spins in neighboring quantum dots subject to a magnetic field gradient.…
We propose a mechanism of coherent coupling between distant spin qubits interacting dipolarly with a ferromagnet. We derive an effective two-spin interaction Hamiltonian and estimate the coupling strength. We discuss the mechanisms of…
We present a theoretical analysis of the nonlinear bias and temperature dependence of current-voltage characteristics of a spin-valve device which is formed by connecting a quantum dot to two ferromagnetic electrodes whose magnetic moments…
We propose and numerically simulate novel reconfigurable logic gates employing spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The output characteristics of the spin MOSFETs depend on the relative magnetization…
The analytic energy gradients with respect to nuclear motion are derived for natural orbital functional (NOF) theory. The resulting equations do not require to resort to linear-response theory, so the computation of NOF energy gradients is…
We propose an implementation of the two-qubit gate in a quantum dot spin qubit system which is immune to charge noise problems. Our proposed implementation, if it could be realized in a physical system, would have the advantage of being…
Theoretical analysis of the experimental data for the energy levels of two interacting electrons confined by a finite Gaussian potential in a 2D quantum dot and subjected to a uniform magnetic field perpendicular to the plane of the dot is…
We investigate nonlinear thermal transport properties of a single interacting quantum dot with two energy levels tunnel-coupled to two electrodes using nonequilibrium Green function method and Hartree-Fock decoupling approximation. In the…
A gate-defined quantum dot in an InAs nanowire is fabricated on top of a quantum point contact realized in a two-dimensional electron gas. The strong coupling between these two quantum devices is used to perform time-averaged as well as…
Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework…
Consider a unit-resistive plate in the shape of a regular polygon with 2n sides, in which even-numbered sides are wired to electrodes and odd-numbered sides are insulated. The response matrix, or Dirichlet-to-Neumann map, allows one to…
Electron tunneling through a double quantum dot molecule, in the Kondo regime, under the effect of a magnetic field and an applied voltage, is studied. This system possesses a complex response to the applied fields characterized by a…