Related papers: Surface spin flip probability of mesoscopic Ag wir…
We theoretically study thermally-activated phase slips in superfluid spin transport in easy-plane magnetic wires within the stochastic Landau-Lifshitz-Gilbert phenomenology, which runs parallel to the Langer-Ambegaokar-McCumber-Halperin…
In a recent inelastic neutron scattering experiment in the pseudogap state of the high temperature superconductor $\mathrm{YBa_{2}Cu_{3}O_{6.6}}$ an unusual `vertical' dispersion of the spin excitations with a large in-plane anisotropy was…
We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional electron gases (2DEGs) in a series of n-doped GaAs/AlGaAs quantum wells. Picosecond-resolution polarized pump-probe reflection techniques…
We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar…
We investigate spin transport in quasi 2DEG formed by III-V semiconductor heterojunctions using the Monte Carlo method. The results obtained with and without electron-electron scattering are compared and appreciable difference between the…
We report an observation of spin-valve like hysteresis within a few atomic layers at a ferromagnetic interface. We use phonon spectroscopy of nanometer sized point contacts as an in-situ probe to study the mechanism of the effect. Distinct…
The temperature dependence of the spin relaxation time in multilayer graphene (MLG) spin valve devices was measured using a non-local magnetoresistance (NLMR) measurement. A weak localization (WL) was observed from magnetoresistance (MR)…
We present a theory of out-of-equilibrium ultrafast spin dynamics in magnetic heterostructures based on the s-d model of ferromagnetism. Both in the bulk and across interfaces, the exchange processes between the itinerant s and the…
We performed non-local electrical measurements of a series of Py/Cu lateral spin valve devices with different Cu thicknesses. We show that both the spin diffusion length of Cu and the apparent spin polarization of Py increase with Cu…
The direct electrical method was used to study the behavior of the spin Hall effect in a magnetic field perpendicular to the injection current in aluminum samples with resistivities that differed by two orders of magnitude at a temperature…
We experimentally confirmed that the spin-orbit lengths of noble metals obtained from weak anti-localization measurements are comparable to the spin diffusion lengths determined from lateral spin valve ones. Even for metals with strong…
The influence of surface anisotropy on the magnetization processes of maghemite nanoparticles with ellipsoidal shape is studied by means of Monte Carlo simulations. Radial surface anisotropy is found to favor the formation of hedgehog-like…
Spin relaxation time of conduction electrons through the Elliot-Yafet, D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance of each…
The $\mathbf k$-dependent electronic momentum relaxation rate due to Umklapp scattering from antiferromagnetic spin fluctuations is studied within a renormalized mean-field approach to an extended $t-J$ model appropriate to…
The spin flip of the conduction electrons at the interface of a ferromagnetic and a nonmagnetic part of a metallic wire, suspended between two electrodes, is shown to tort the wire when a current is driven through it. In order to enhance…
We investigate the spin-polarization of the ferromagnetic semiconductor (Ga,Mn)As by point contact Andreev reflection spectroscopy. The conductance spectra are analyzed using a recent theoretical model that accounts for momentum- and…
A semiclassical Monte Carlo approach is adopted to study the multivalley spin depolarization of drifting electrons in a doped n-type GaAs bulk semiconductor, in a wide range of lattice temperature ($40<T_L<300$ K) and doping density…
Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double quantum dots are presented. The relaxation, enabled by spin-orbit coupling and the nuclei of $^{29}$Si (natural or purified abundance), are…
The mechanisms that determine spin relaxation times of localized electrons in impurity bands of n-type semiconductors are considered theoretically and compared with available experimental data. The relaxation time of the non-equilibrium…
The spin relaxation time $T_{1}$ in zinc blende GaN quantum dot is investigated for different magnetic field, well width and quantum dot diameter. The spin relaxation caused by the two most important spin relaxation mechanisms in zinc…