Related papers: Proposal for Efficient Generation of Spin-Polarize…
We report on the enhancement of antiferromagnetic coupling in epitaxial Fe/Si/Fe structures by voltage-driven spin-polarized tunneling currents. Using the ballistic electron magnetic microscopy we established that the hot-electron collector…
We have experimentally and theoretically investigated the spin transport in Fe/Mg/MgO/MgAl2O4/n+-Si(001) ferromagnetic tunnel junctions on a Si substrate, by systematically varying the thickness combination of amorphous MgO and MgAl2O4…
In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the…
We present here a brief overview of current-induced spin polarization in bulk semiconductors and semiconductor structures of various dimension. The role of band structure and spin relaxation processes is discussed. The related phenomena,…
Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their…
The spin-split Fermi level crossings of the conduction band in Ni are mapped out by high-resolution photoemission and compared to the equivalent crossing in Cu. The area of the quasiparticle peak decreases rapidly below Ef in Ni, but not in…
The steady current-voltage characteristics of ferromagnet-silicon-ferromagnet channels with tunable emitter and collector polarizations are investigated in the presence of spin blockade generalizing the model developed by Pershin Yu V and…
We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si…
All-electrical control of spin transport in nanostructures has been the central interest and chal- lenge of spin physics and spintronics. Here we demonstrate on-chip spin polarizing/filtering actions by driving the gate-defined one…
The spin current model of electric polarization of multiferroics is justified via the quantum hydrodynamic method and the mean-field part of the spin-orbit interaction. The spin current model is applied to derive the electric polarization…
The transport property of a lateral two-dimensional diluted magnetic semiconductor electron gas under a spatially periodic magnetic field is investigated theoretically. We find that the electron Fermi velocity along the modulation direction…
The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…
Semiconductor point contacts can be a useful tool for producing spin-polarized currents in the presence of spin-orbit (SO) interaction. Neither magnetic fields nor magnetic materials are required. By numerical studies, we show that (i) the…
We study an electrically controlled quantum spin Hall antidot embedded in a two-dimensional topological insulating bar. Helical edge states around the antidot and along the edges of the bar are tunnel coupled. The close connection between…
We have explored a new mechanism for switching magnetism and superconductivity in a magnetically frustrated iron-based superconductor using spin-polarized scanning tunneling microscopy (SPSTM). Our SPSTM study on single crystal…
We study the spin-dependent conductance of ballistic mesoscopic ring systems in the presence of an inhomogeneous magnetic field. We show that, for the setup proposed, even a small Zeeman splitting can lead to a considerable spin…
Electric currents carrying a net spin polarization are widely used in spintronics, whereas globally spin-neutral currents are expected to play no role in spin-dependent phenomena. Here we show that, in contrast to this common expectation,…
A systematic investigation of spin injection behavior in Au/FM (FM = Fe and Ni) multilayers is performed using the superdiffusive spin transport theory. By exciting the nonmagnetic layer, the laser-induced hot electrons may transfer spin…
We propose a device concept, based on monolayer stanene, able to provide highly polarized spin currents (up to a $98\%$) with voltage-controlled spin polarization operating at room temperature and with small operating voltage ($0.3$ V). The…
We report the successful electrical creation of spin polarization in p-type Si at room temperature by using an epitaxial MgO(001) tunnel barrier and Fe(001) electrode. Reflection high-energy electron diffraction observations revealed that…