Related papers: Hall effect in superconducting Fe(Se0.5Te0.5) thin…
Anomalous Hall effect (AHE) of a ferromagnetic semiconductor anatase \cotio thin film is studied from 10K to 300K. Magnetic field dependence of anomalous Hall resistance is coincident with that of magnetization, while the anomalous Hall…
Hall effect and magnetoresistance have been measured on single crystals of $NdFeAsO_{1-x}F_{x}$ with x = 0 ($T_c$ = 0 $ $K) and x = 0.18 ($T_c$ = 50 $ $K). For the undoped samples, strong Hall effect and magnetoresistance with strong…
Magnetoresistivity and Hall effect measured in magnetic fields up to B=9T (B||c, J||ab) in electron-doped $Nd_{2-x}$Ce_{x}Cu$O_{4+{\delta}} single crystal films with x = 0.14; 0.15; 0.18 and different oxygen content ({\delta}) were studied…
Here we report the first results of the high-pressure Hall coefficient (RH) measurements, combined with the high-pressure resistance measurements, at different temperatures on the putative topological superconductor FeTe0.55Se0.45. We find…
Hall effect was studied on the single crystals of antiferromagnets PrB$_6$ and NdB$_6$ at temperatures 2K$<$T$<300$K in magnetic fields up to 8T using the sample rotation technique. At low magnetic fields $\mu_0$H$\leq1$T Hall coefficient…
SiO2/Fe/SiO2 sandwich structure films fabricated by sputtering were studied by varying the Fe layer thickness (t_Fe). The structural and microstructural studies on the samples showed that the Fe layer has grown in nanocrystalline form with…
Near the superconducting phase transition, fluctuations significantly modify the electronic transport properties. Here we study the fluctuation corrections to the Hall conductivity in disordered films, extending previous derivations to a…
Cr0.68Se single crystals with two-dimensional (2D) character have been grown, and the detailed magnetization M(T), electrical transport properties (including longitudinal resistivity and Hall resistivity and thermal transport ones…
High precision measurements of the complex sheet conductivity of superconducting Mo77Ge23 thin films have been made from 0.4 K through Tc. A sharp drop in the inverse sheet inductance, 1/L(T), is observed at a temperature, Tc, which lies…
We performed systematic studies on the transport properties of FeSe thin films with controlled degrees of in-plane lattice strain, including both tensile and compressive strains. The superconducting transition temperature, $T_{\mathrm c}$,…
The transport properties of La$_{1.89}$Ce$_{0.11}$CuO$_{4}$(LCCO) and La$_{1.89}$Ce$_{0.11}$(Cu$_{0.99}$Co$_{0.01}$)O$_{4}$ (LCCO:Co) superconducting thin films are investigated. When the external field $\bf H$ is applied along the…
We present sensitive measurements of the Hall effect and magnetoresistance in CeIrIn${_5}$ down to temperatures of 50 mK and magnetic fields up to 15 T. The presence of a low temperature coherent Kondo state is established. Deviations from…
Herein, we report CeIrIn5 thin-film growth on a MgF2 (001) substrate using pulsed laser deposition technique. X-ray diffraction analysis showed that the thin films were either mainly a-axis-oriented (TF1) or a combination of a- and…
The Hall resistivity rho_{xy} of a La_{2/3}(Ca,Pb)_{1/3}MnO_3 single crystal has been measured as a function of temperature and field. The overall behavior is similar to that observed previously in thin-films. At 5 K, rho_{xy} is positive…
We have studied the Hall effect in superconducting tantalum nitride films. We find a large contribution to the Hall conductivity near the superconducting transition, which we can track to temperatures well above $T_c$ and magnetic fields…
Quantum anomalous Hall effect(QAHE) can only be realized at extremely low temperatures in magnetically doped topological insulators(TIs) due to limitations inherent with the doping precess. In an effort to boost the quantization temperature…
The temperature dependence of the Hall coefficient of a series of ferromagnetic Ga(1-x)Mn(x)As samples is measured in the temperature range 80K < T < 500K. We model the Hall coefficient assuming a magnetic susceptibility given by the…
The Hall effect is a powerful tool for investigating carrier type and density. For single-band materials, the Hall coefficient is traditionally expressed simply by $R_H^{-1} = -en$, where $e$ is the charge of the carrier, and $n$ is the…
Thin films of $\alpha$-MoGe show progressively reduced $T_{c}$'s as the thickness is decreased below 30 nm and the sheet resistance exceeds 100 $\Omega/\Box$. We have performed far-infrared transmission and reflection measurements for a set…
We systematically investigated the temperature behaviors of the electrical conductivity and Hall coefficient of two series of amorphous indium gallium zinc oxides (a-IGZO) films prepared by rf sputtering method. The two series of films are…