Related papers: Ballistic quantum spin Hall state and enhanced edg…
At high magnetic fields, where the Fermi level lies in the N=0 lowest Landau level (LL), a clean two-dimensional electron system (2DES) exhibits numerous incompressible liquid phases which display the fractional quantized Hall effect (FQHE)…
The spin Hall effect in a two-dimensional electron system on honeycomb lattice with both intrinsic and Rashba spin-orbit couplings is studied numerically. Integer quantized spin Hall conductance is obtained at zero Rashba coupling limit…
We demonstrate characteristics of a bosonic fractional quantum Hall (FQH) state in a one-dimensional extended Bose-Hubbard model (eBHM) with a static tilt. In the large tilt limit, quenched kinetic energy leads to emergent dipole moment…
We propose a topological understanding of the quantum spin Hall state without considering any symmetries, and it follows from the gauge invariance that either the energy gap or the spin spectrum gap needs to close on the system edges, the…
Broken-symmetry quantum Hall (QH) states with filling factors \nu=0, \pm 1, \pm 2, \pm 3 in the lowest Landau level in bilayer graphene are analyzed by solving the gap equation in the random phase approximation. It is shown that in the…
Spin-polarized conducting edge currents counterpropagate in quantum spin Hall (QSH) insulators and are protected against disorder-driven localizations by the time-reversal symmetry. Using these spin-currents for device applications require…
To fully appreciate the impacts that the discovery of the quantum Hall effect had on electrical metrology, it may benefit the reader to cultivate a general understanding of the phenomenon. Two-dimensional electron systems can exhibit many…
The integer quantum Hall effect features a paradigmatic quantum phase transition. Despite decades of work, experimental, numerical, and analytical studies have yet to agree on a unified understanding of the critical behavior. Based on a…
This is a joint publication with the Letter by H. Huang and F. Liu [Phys. Rev. Lett. 121, 126401 (2018)]. In this work, we propose the spin Bott index to identify the quantum spin Hall (QSH) state in both crystalline and non-periodic…
In wide GaAs quantum wells where two electric subbands are occupied we apply a parallel magnetic field or increase the electron density to cause a crossing of the two $N=0$ Landau levels of these subbands and with opposite spins. Near the…
A low-energy neutral quasiparticle in a fractional quantum Hall system appears in the latter's energy spectrum on a sphere as a series of many-body excited states labeled by the angular momentum $L$ and whose energy is a smooth function of…
The quantum valley Hall effect (QVHE) has been observed in a variety of experimental setups, both quantum and classical. While extremely promising for applications, one should be reminded that QVHE is not an exact topological phenomenon and…
The effects of impurity scattering on a general Abelian fractional quantum Hall (FQH) edge state are analyzed within the chiral-Luttinger-liquid model of low-energy edge dynamics. We find that some disordered edges can have several…
Chiral integer quantum Hall (QH) edge modes are immune to backscattering and therefore are non-localized and show a vanishing longitudinal as well as non-local resistance along with quantized 2-terminal and Hall resistance even in the…
We study theoretically the two-dimensional topological electric state in a single band semiconductor with strong spin-orbit interactions under harmonic scalar electrostatic potentials. The electronic states described by the spin Landau…
The tilting angular dependence of the energy gap was measured in the bilayer quantum Hall state at the Landau level filling $\nu=1$ by changing the density imbalance between the two layers. The observed gap behavior shows a continuous…
We investigate lateral p-n junctions, electrostatically defined in 14 nm-wide HgTe-based quantum wells (QWs) with inverted band structure. The p-n junctions resistances are close to $h/2e^2$, consistent with some previous experiments on…
We study the \nu=5/2 even-denominator fractional quantum Hall effect (FQHE) over a wide range of magnetic (B) field in a heterojunction insulated gate field-effect transistor (HIGFET). The electron density can be tuned from n=0 to 7.6…
We demonstrate via exact diagonalization that AA-stacked TMD homobilayers host fractional quantum anomalous Hall (FQAH) states with fractionally quantized Hall conductance at fractional fillings $n=\frac{1}{3},\, \frac{2}{3}$ and zero…
We study the low energy edge states of bilayer graphene in a strong perpendicular magnetic field. Several possible simple boundaries geometries related to zigzag edges are considered. Tight-binding calculations reveal three types of edge…