Related papers: Ballistic quantum spin Hall state and enhanced edg…
We investigate theoretically the electron states in HgTe quantum dots (QDs) with inverted band structures. In sharp contrast to conventional semiconductor quantum dots, the quantum states in the gap of HgTe quantum dot with an inverted band…
The quantum spin hall (QSH) phase, also known as the 2D topological insulator, is characterized by protected helical edge modes arising from time reversal symmetry. While initially proposed for band insulators, this phase can also manifest…
Two dimensional electronic systems under strong magnetic field form quantum Hall (QH) edge states, which propagate along the boundary of a sample with a dissipationless current. Engineering the pathway of these propagating one-dimensional…
Quantum spin Hall (QSH) insulators are two-dimensional electronic materials that have a bulk band gap like an ordinary insulator but have topologically protected pairs of edge modes of opposite chiralities. To date, experimental studies…
A Quantum Spin-Hall Insulator (QSHI) is implemented into a simple mass-spring Kagome lattice. The transition from the trivial state to the topological one is described by an invariant Chern number function of a contrast parameter. The band…
A Kramers pair of helical edge states in quantum spin Hall effect (QSHE) is robust against normal dephasing but not robust to spin dephasing. In our work, we provide an effective spin dephasing mechanism in the puddles of two-dimensional…
Quantum spin Hall (QSH) insulators are materials that feature an insulating bulk and host edge states protected by time-reversal symmetry. The helical locking of spin and momentum in these states suppresses backscattering of charge…
Quantum spin Hall (QSH) materials are two-dimensional systems exhibiting insulating bulk and helical edge states simultaneously. A QSH insulator processes topologically non-trivial edge states protected by time-reversal symmetry, so that…
Helical edge states in quantum spin Hall (QSH) materials are central building blocks of topological matter design and engineering. Despite their principal topological protection against elastic backscattering, the level of operational…
We consider a quantum spin Hall system in a two-terminal setup, with an extended tunneling contact connecting upper and lower edges. We analyze the effects of this geometry on the backscattering current as a function of voltage,…
A novel topological insulator with tunable edge states, called quantum spin-quantum anomalous Hall (QSQAH) insulator, is predicted in a heterostructure of a hydrogenated Sb (SbH) monolayer on a LaFeO3 substrate by using ab initio methods.…
By restricting the motion of high-mobility 2D electron gas to a network of channels with smooth confinement, we were able to trace, both classically and quantum-mechanically, the interplay of backscattering, and of the bending action of a…
Quantum Hall effect (QHE) is one of the most fruitful research topics in condensed-matter physics. Ordinarily, the QHE manifests in a ground state with time-reversal symmetry broken by magnetization to carry a quantized chiral edge…
We combine the ideas of intensity interferometry, polarization optics and Bell's measurement into an experimental proposal which is hosted in a $\nu\,$=$\,2$ quantum Hall (QH) edge state. Our interferometer comprises of a single gate, that…
We propose a minimal effective two-dimensional Hamiltonian for HgTe/CdHgTe quantum wells (QWs) describing the side maxima of the first valence subband. By using the Hamiltonian, we explore the picture of helical edge states in tensile and…
Quantum spin-Hall edges are envisaged as next-generation transistors, yet they exhibit dissipationless transport only over short distances. Here we show that in a diffusive sample, where charge puddles with odd spin cause back-scattering, a…
It has been demonstrated that topological quantum spin Hall (QSH) state exist in twisted bilayers of transition metal dichalcogenides. However, a comprehensive theoretical characterization of the topological edge states remains a topic of…
Inverted-gap GaSb/InAs quantum wells have long been predicted to show quantum spin Hall insulator (QSHI) behavior. The experimental characterization of the QSHI phase in these systems has relied on the presence of quantized edge transport…
The information content of one-electron bulk and edge states in semiconductor quantum wells is calculated in the inverted regime, where edge states, topologically protected, are responsible for the conduction in Spin Quantum Hall effect…
The quantum spin Hall (QSH) effect, characterized by topologically protected spin-polarized edge states, was recently demonstrated in monolayers of the transition metal dichalcogenide (TMD) WTe$_2$. However, the robustness of this…