Related papers: Glissile dislocations with transient cores in sili…
We derive an expression of the core traction contribution to the dislocation elastic energy within linear anisotropic elasticity theory using the sextic formalism. With this contribution, the elastic energy is a state variable consistent…
Plastic deformation, at all strain rates, is accommodated by the collective motion of crystalline defects known as dislocations. Here, we extend an analysis for the energetic stability of a straight dislocation, the so-called line tension…
Linear defects such as dislocations and disclinations in ordered materials attract foreign particles since they replace strong elastic distortions at the defect cores. In this work, we explore the behavior of isotropic droplets nucleating…
A continual model of non-singular screw dislocation lying along a straight infinitely long circular cylinder is investigated in the framework of translational gauge approach with the Hilbert--Einstein gauge Lagrangian. The stress--strain…
In classical elasticity theory the stress-field of a dislocation is characterized by a $1/r$-type singularity. When such a dislocation is considered together with an Allen-Cahn-type phase-field description for microstructure evolution this…
The generalized stacking fault (GSF) energy surfaces have received considerable attention due to their close relation to the mechanical properties of solids. We present a detailed study of the GSF energy surfaces of silicon within the…
An asymptotically exact continuum dislocation theory of single crystal bars under torsion is proposed. The dislocation distribution minimizing energy of the bar with zero torque is shown to be uniform. If the applied torque is non-zero, the…
Recent experiments by Kiritani et al. have revealed a surprisingly high rate of vacancy production during high-speed deformation of thin foils of fcc metals. Virtually no dislocations are seen after the deformation. This is interpreted as…
We study the electronic properties of the glide set of dislocations in diamond from first principles using hybrid exchange correlation functionals and find that the atomic-scale dislocation core states give rise to a prototypical…
A three-dimensional continuum dislocation theory for single crystals containing curved dislocations is proposed. A set of governing equations and boundary conditions is derived for the true placement, plastic slips, and loop functions in…
A novel model based on the Peierls framework of dislocations is developed. The new theory can deal with a dislocation spreading at more than one slip planes. As an example, we study dislocation cross-slip and constriction process of two fcc…
We investigate the depinning transition occurring in dislocation assemblies. In particular, we consider the cases of regularly spaced pileups and low angle grain boundaries interacting with a disordered stress landscape provided by solute…
Sapphire and rubies (undoped and Cr-doped $\alpha$-Al$_2$O$_3$ single crystals) have been deformed in compression at temperatures lower than those previously used in studies of dislocations in the basal slip plane (see part I). Above…
The structure and mobility of dislocations in the layered semiconductor InSe is studied within a multiscale approach based on generalized Peierls--Nabarro model with material-specific parametrization derived from first principles. The…
Changes in stress applied to mantle rocks, such as those imposed by earthquakes, induce a period of evolution in viscosity and microstructure. This transient creep is often modelled based on stress transfer among slip systems due to grain…
We demonstrate single spin spectroscopy of a fluorescent tumbling defect in silicon called the G center, behaving as a pseudo-molecule randomly reorienting itself in the crystalline matrix. Using high-resolution spin spectroscopy, we reveal…
The scattering of carriers by charged dislocations in semiconductors is studied within the framework of the linearized Boltzmann transport theory with an emphasis on examining consequences of the extreme anisotropy of the scattering…
In general, the cross-slip of superdislocations (a/2<011>) from {111} planes to {001} planes has been frequently observed in superalloys, accompanied by the formation of an antiphase boundary (APB) and driven by thermal activation. However,…
Dislocation model of the supersolid state of $^4$He was proposed in 1987 by one of the authors of the review. The model obtained strong support by numerous experimental and theoretical investigations from 2007 to date. In these…
(a+c) dislocations in hexagonal materials are typically observed to be dissociated into partial dislocations. Edge (a+c) dislocations are introduced into (0001) nitride semiconductor layers by the process of plastic relaxation. As there is…