Related papers: Electron Scattering and Hybrid Phonons in Low Dime…
Intra and intersubband scattering rates and electron capture rates are considered when mediated by hybrid optical phonons in an AlAs/GaAs/AlAs double heterostructure confined between two outer metallic barriers. In evaluating scattering…
The study of phonon coupling in doped semiconductors via electrical transport measurements is challenging due to unwanted temperature-induced effects such as dopant ionisation and parallel conduction. Here, we study phonon scattering in 2D…
We have theoretically and numerically studied nitride-based quantum well (QW) laser structures. More specifically, we have used a QW made with III-nitride where the width of the barrier region is large relative to the electron mean free…
Experiments on resonances of conduction electrons in InGaAs/InAlAs double quantum wells at megagauss magnetic fields in the Faraday geometry are reported. We observe new cyclotron resonances assisted by emission of InAs-like and GaAs-like…
The optic vibrational (confined and interface) modes and the electron-phonon and hole-phonon interactions are obtained, in the dielectric continuum model, for two diluted magnetic semiconductor structures: a single well of…
Interactions between electrons and phonons play a crucial role in quantum materials. Yet, there is no universal method that would simultaneously accurately account for strong electron-phonon interactions and electronic correlations. By…
Based on the quantum transport equation for the electron-phonon system, the absorption coefficient of sound (acoustic phonons) by absorption of laser radiation in cylindrical quantum wires is calculated for the case of monophoton absorption…
We study phonon emission in a GaAs/AlGaAs double quantum dot by monitoring the tunneling of a single electron between the two dots. We prepare the system such that a known amount of energy is emitted in the transition process. The energy is…
We show that mismatch of the piezoelectric parameters between layers of multiple-quantum well structures leads to modification of the electron-phonon interaction. In particular, short-wavelength phonons propagating perpendicular to the…
Using a recently-developed time-of-flight measurement technique with 1 ps time resolution and electron-energy spectroscopy, we developed a method to measure the longitudinal-optical-phonon emission rate of hot electrons travelling along a…
Quantum coherent coupling between a zone-center phonon and two acoustic phonons was observed in two GaAs/AlAs superlattices (8 nm/8 nm and 5.4 nm/5.4 nm) at ambient temperature. Using degenerate coherent phonon spectroscopy, a multi-cycle…
Polar optical phonons are studied in the framework of the dielectric continuum approach for a prototypical quantum-dot/quantum-well (QD/QW) heterostructure, including the derivation of the electron-phonon interaction Hamiltonian and a…
Electron capture times in a separate confinement quantum well (QW) structure with finite electron density are calculated for electron-electron (e-e) and electron-polar optic phonon (e-pop) scattering. We find that the capture time…
The absorption of bulk acoustic phonons in a two-dimensional (2D) GaAs/AlGaAs heterostructure is studied (in the clean limit) where the 2D electron-gas (2DEG), being in an odd-integer quantum-Hall state, is in fact a spin dielectric. Of the…
We investigate the scattering of an electron by phonons in a small structure between two one-dimensional tight-binding leads. This model mimics the quantum electron transport through atomic wires or molecular junctions coupled to metallic…
Electron-hole recollisions are induced by resonantly injecting excitons with a near-IR laser at frequency $f_{\text{NIR}}$ into quantum wells driven by a ~10 kV/cm field oscillating at $f_{\text{THz}} = 0.57$ THz. At $T=12$ K, up to 18…
The performance of hybrid GaAs pixel detectors as X-ray imaging sensors were investigated at room temperature. These hybrids consist of 300 mu-m thick GaAs pixel detectors, flip-chip bonded to a CMOS Single Photon Counting Chip (PCC). This…
The compound semiconductor gallium arsenide (GaAs) provides an ultra-clean platform for storing and manipulating quantum information, encoded in the charge or spin states of electrons confined in nanostructures. The absence of inversion…
The aim of this work is to describe the behavior of a device capable to generate high frequency (~THz) acoustic phonons. This device consists in a GaAs-AlGaAs double barrier heterostructure that, when an external bias is applied, produces a…
We predict a double-resonant feature in the magnetic field dependence of the phonon-mediated longitudinal conductivity $\sigma_{xx}$ of a two-subband quasi-two-dimensional electron system in a quantizing magnetic field. The two sharp peaks…