Related papers: Spin-orbit splittings in Si/SiGe quantum wells
We propose a lateral spin-blockade device that uses an InGaAs/InAlAs double quantum well (DQW), where the values of the Rashba spin-orbit parameter $\alpha_{\rm R}$ are opposite in sign but equal in magnitude between the constituent quantum…
We measure the excited-state spectrum of a Si/SiGe quantum dot as a function of in-plane magnetic field, and we identify the spin of the lowest three eigenstates in an effective two-electron regime. The singlet-triplet splitting is an…
Electron states are studied for quantum dots in a strained Si quantum well, taking into account both valley and orbital physics. Realistic geometries are considered, including circular and elliptical dot shapes, parallel and perpendicular…
Increasing the spin-orbit coupling in InGaAs quantum wells is desirable for applications involving spintronics and topological quantum computing. Digital alloying is an approach towards growing ternary quantum wells that enables asymmetric…
The magnetic properties of hole quantum dots in Ge are sensitive to their shape due to the interplay between strong spin-orbit coupling and confinement. We show that the split-off band, surrounding SiGe layers, and hole-hole interactions…
Spin-orbit coupling (SOC) has gained much attention for its rich physical phenomena and highly promising applications in spintronic devices. The Rashba-type SOC in systems with inversion symmetry breaking is particularly attractive for…
We study the spin polarization of mixed and entangled electron states in a four probe/beam splitter geometry with local Rashba and Dresselhaus interactions. A pair of maximally entangled electrons collides with the beam splitter and enters…
We present a theory pertaining to the asymptotic behavior of Rashba energy splitting in a quantum-well state (QWS). First, unlike previous studies, we derive $\textbf{k}$-linear Rashba term from a first-principles Hamiltonian in a…
We study the low-energy spectrum of a single hole confined in a planar Ge quantum dot (QD) within the effective-mass formalism. The QD is sandwiched between two GeSi barriers of finite potential height grown along the [001] direction. To…
Exploiting inversion symmetry breaking (ISB) in systems with strong spin-orbit coupling promises control of spin through electric fields - crucial to achieve miniaturization in spintronic devices. Delivering on this promise requires a…
We experimentally and theoretically investigate the spin orbit (SO) field in a physically defined, p type metal oxide semiconductor double quantum dot in silicon. We measure the magnetic field dependence of the leakage current through the…
When subjected to a linearly polarized terahertz pulse, a mesoscopic ring endowed with spin-orbit interaction (SOI) of the Rashba-Dresselhaus type exhibits nonuniform azimuthal charge and spin distributions. Both types of SOI couplings are…
We present an analytic solution to the problem of the Rashba spin-orbit coupling in semiconductor quantum dots. We calculate the exact energy spectrum, wave-functions, and spin--flip relaxation times. We discuss various effects inaccessible…
We derive the eigenenergies and eigenstates of electrons in a quantum wire subjected to an external magnetic field. These are calculated in the presence of spin orbit interactions arising from the Rashba (structural inversion asymmetry) and…
This article presents an overview of results pertaining to electronic structure, transport properties, and interaction effects in ballistic quantum wires with Rashba spin splitting. Limits of weak and strong spin--orbit coupling are…
We analyze the low-energy spectrum of a two-electron double quantum dot under a potential bias in the presence of an external magnetic field. We focus on the regime of spin blockade, taking into account the spin orbit interaction and…
The Kubo formula is used to calculate the spin-Hall conductivity in a spin-polarized two-dimensional electron system with Rashba-type spin-orbit interaction. As in the case of the unpolarized electron system, spin Hall conductivity is…
Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin…
In the absence of an external field, the Rashba spin-orbit interaction (SOI) in a two-dimensional electron gas in a semiconductor quantum well arises entirely from the screened electrostatic potential of ionized donors. We adjust the wave…
We introduce and solve a semi-classical random walk (RW) model that describes the dynamics of spin polarization waves in zinc-blende semiconductor quantum wells. We derive the dispersion relations for these waves, including the Rashba,…