Related papers: Scattering Mechanism in Modulation-Doped Shallow T…
The two-dimensional electron gas (2DEG) in reduced strontium titanate offers a versatile platform for oxide electronics, yet its dissipation mechanisms under field driven charge fluctuations remain poorly understood. Here, we combine…
Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually high mobilities ($>10^{7}{\rm{cm}^{2}\rm{V}^{-1}\rm{s}^{-1}}$) are achieved at high…
Using scanning gate microscopy (SGM), we probe the scattering between a beam of electrons and a two-dimensional electron gas (2DEG) as a function of the beam's injection energy, and distance from the injection point. At low injection…
We provide the first observation of weak localization in high carrier density two-dimensional electron gas in AlInN/GaN heterostructures; at low temperatures and low fields the conductivity increases with increasing magnetic field. Weak…
Considering the quantum dynamics of 2DEG exposed to both a stationary magnetic field and an intense high-frequency electromagnetic wave, we found that the wave decreases the scattering-induced broadening of Landau levels. Therefore, various…
Semiconductor nanostructures based on two dimensional electron gases (2DEGs) have the potential to provide new approaches to sensing, information processing, and quantum computation. Much is known about electron transport in 2DEG…
Motivated by recent breakthrough in molecular beam epitaxy of GaAs/AlGaAs quantum wells [Y. J. Chung \textit{et al.}, Nature Materials \textbf{20}, 632 (2021)], we examine contributions to mobility and quantum mobility from various…
We have considered the conductivity properties of a two dimensional electron gas (2DEG) in two different kinds of inhomogeneous magnetic fields, i.e. a disordered distribution of magnetic flux vortices, and a periodic array of magnetic flux…
Two dimensional electron gases (2DEGs) realized at GaAs/AlGaAs single interfaces by molecular-beam epitaxy (MBE) reach mobilities of about 15 million cm^2/Vs if the AlGaAs alloy is grown after the GaAs. Surprisingly, the mobilities may drop…
We propose and study theoretically a new mechanism of electron-impurity scattering in doped seminconductors with large dielectric constant. It is based upon the idea of \textit{vector} character of deformations caused in the crystalline…
We calculate the single-particle states of a two-dimensional electron gas (2DEG) in a perpendicular quantizing magnetic field, which is periodic in one direction of the electron layer. We discuss the modulation of the electron density in…
Two dimensional electron gases (2DEGs) at a oxide heterostructures are attracting considerable attention, as these might substitute conventional semiconductors for novel electronic devices [1]. Here we present a minimal set-up for such a…
Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in…
We have considered the conductivity properties of a two dimensional electron gas (2DEG) in two different kinds of inhomogeneous magnetic fields, i.e.\ a disordered distribution of magnetic flux vortices, and a periodic array of magnetic…
The origin of the two-dimensional electron gas (2DEG) in the interface between $\gamma$-Al$_2$O$_3$ (GAO) and SrTiO$_3$ (STO) (GAO/STO) as well as the reason for the high mobility of the 2DEG is still in debate. In this paper, the…
Recent claims of an experimental demonstration of spontaneous spin polarisation in dilute electron gases \cite{young99} revived long standing theoretical discussions \cite{ceper99,bloch}. In two dimensions, the stabilisation of a…
We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more…
We investigate spin transport in quasi 2DEG formed by III-V semiconductor heterojunctions using the Monte Carlo method. The results obtained with and without electron-electron scattering are compared and appreciable difference between the…
In this paper, density functional theory calculations are used to explore the electronic and atomic reconstruction at interfaces between III-III/I-V oxides. In particular, at these interfaces, two dimensional electron gases (2DEGs) with…
In modern GaAs/Al$_x$Ga$_{1-x}$As heterostructures with record high mobilities, a two-dimensional electron gas (2DEG) in a quantum well is provided by two remote donor $\delta$-layers placed on both sides of the well. Each $\delta$-layer is…