Related papers: Write-once read-many-times memory based on a singl…
We present a nanomechanical device design to be used in a non-volatile mechanical memory point. The structure is composed of a suspended slender nanowire (width : 100nm, thickness 430nm length : 8 to 30$\mu$m) clamped at its both ends.…
In this work, we propose a novel differential photonic static random access memory (pSRAM) bitcell design using fabrication-friendly photonic components. The proposed pSRAM overcomes the key limitations of traditional electrical SRAMs,…
Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional…
The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in…
The operation of a novel nonvolatile memory device based on a conductive ferroelectric/non-ferroelectric thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady state solution of Poisson's…
The necessity of having an electronic device working in relevant biological time scales with a small footprint boosted the research of a new class of emerging memories. Ag-based volatile resistive switching memories (RRAMs) feature a…
Understanding the physical and chemical mechanisms occurring during the forming process and operation of an organic resistive memory device is a major issue for better performances. Various mechanisms were suggested in vertically stacked…
A long-lived quantum memory was developed based on light-compensated cold $^{87}$Rb atoms in a dipole trap. The lifetime of the quantum memory was improved by 40 folds, from 0.67 ms to 28 ms with the help of a compensation laser beam.…
The growing energy demands of information and communication technologies, driven by data-intensive computing and the von Neumann bottleneck, underscore the need for energy-efficient alternatives. Resistive random-access memory (RRAM)…
We present a quantum memory protocol for photons that is based on the direct control of the transition dipole moment. We focus on the case where the light-matter interaction is enhanced by a cavity. We show that the optimal write process…
A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…
Ferroelectrics offer a promising materials platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET…
As computing power demands continue to grow, superconducting electronics present an opportunity to reduce power consumption by increasing the energy efficiency of digital logic and memory. A key milestone for scaling this technology is the…
Traditional memory writing operations proceed one bit at a time, where e.g. an individual magnetic domain is force-flipped by a localized external field. One way to increase material storage capacity would be to write several bits at a time…
Implementing on-chip non-volatile optical memories has long been an actively pursued goal, promising significant enhancements in the capability and energy efficiency of photonic integrated circuits. Here, a novel optical memory has been…
Using numerical simulations it is shown that a random, athermal pack of soft frictional grains will store an arbitrary waveform that is applied as a small time-dependent shear while the system is slowly compressed. When the system is…
Reliable organic ferroelectrics for memory applications require extreme endurance under repeated electrical switching. Here we demonstrate exceptional fatigue resistance in highly crystalline 2-methylbenzimidazole (MBI) films grown by…
Quantum memory is the core device for the construction of large-scale quantum networks. For scalable and convenient practical applications, integrated optical memories, especially on-chip optical memories, are crucial requirements because…
We propose non-volatile memory (NVM) designs based on Piezoelectric Strain FET (PeFET) utilizing a piezoelectric/ferroelectric (PE/FE such as PZT) coupled with 2D Transition Metal Dichalcogenide (2D-TMD such as MoS2) transistor. The…
Charge-to-spin and spin-to-charge conversion mechanisms in high spin-orbit materials are the new frontier of memory devices. They operate via spin-orbit torque (SOT) switching of a magnetic electrode, driven by an applied charge current. In…